Uchicago Argonne, LLC

Andreas Roelofs

Saptarshi Das

Anirudha V Sumant

Seth B Darling

Jeffrey R Guest

Maxim Nikiforov

Ozgun Suzer

Seungbum Hong

Mrinal K Bera

Mark Antonio

A method for rapid imaging of a material specimen includes positioning a tip to contact the material specimen, and applying a force to a surface of the material specimen via the tip. In addition, the method includes moving the tip across the surface of the material specimen while removing electrical charge therefrom, generating a signal produced by contact between the tip and the surface, and detecting, based on the data, the removed electrical charge induced through the tip during movement of the tip across the surface. The method further includes measuring the detected electrical charge.

Charge gradient microscopy

A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.

Methods for top-down fabrication of wafer scale TMDC monolayers

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

All 2D, high mobility, flexible, transparent thin film transistor

Systems and methods for opto electric properties are provided. A light source illuminates a sample. A reference detector senses light from the light source. A sample detector receives light from the sample. A positioning fixture allows for relative positioning of the sample or the light source with respect to each other. An electrical signal device measures the electrical properties of the sample. The reference detector, sample detector and electrical signal device provide information that may be processed to determine opto-electric properties of the same.

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Wheaton, IL, United States of America

Andreas Roelofs