Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Andreas Plöβl

Matthias Sabathil

Bernd Böhm

Korbinian Perzlmaier

Jürgen Moosburger

Walter Wegleiter

Patrick Rode

Alexander Linkov

Hans-Jürgen Lugauer

Heribert Zull

Mathias Kämpf

Thomas Veit

Jens Dennemarck

Ewald Karl Michael Günther

Frank Singer

Norwin Von Malm

Siegfried Herrmann

Britta Göötz

Gertrud Kräuter

Ivar Tångring

Peter Stauβ

In an embodiment a transfer tool includes an adhesive stamp having an adhesive surface configured to pick up a semiconductor chip and a device configured to adjust a surface area of the adhesive surface, wherein the adhesive stamp is deformable, wherein the adhesive surface is formed by a part of an outer surface of the adhesive stamp, wherein the surface area of the adhesive surface is adjustable by deformation of the adhesive stamp, and wherein the adhesive surface is free of interruptions.

Transfer tool and method for transferring semiconductor chips

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Method of producing semiconductor chips that efficiently dissipate heat

The invention relates to a light-emitting semiconductor component, comprising&#x2014;a first semiconductor body (), which comprises an active zone () in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body () through a radiation exit surface (), and&#x2014;a second semiconductor body (), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein&#x2014;the first semiconductor body () and the second semiconductor body () are produced separately from each other,&#x2014;the second semiconductor body () is electrically inactive, and&#x2014;the second semiconductor body () is in direct contact with the radiation exit surface () and is attached there to the first semiconductor body () without connecting means.

Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies

An optoelectronic device and a method for producing an optoelectronic device are disclosed. An embodiment of an optoelectronic device includes a carrier, an electrically conductive layer arranged on the carrier, at least one semiconductor chip comprising an active layer for generating electromagnetic radiation, wherein the semiconductor chip is electrically conductively and mechanically connected with the carrier via the electrically conductive layer. The device further comprises a holder, wherein a surface of the carrier remote from the semiconductor chip is arranged on the holder, wherein the carrier is mechanically connected with the holder by at least one fastening element and is fastened to the holder, wherein the fastening element passes completely through the carrier, and wherein the semiconductor chip is electrically conductively connected to the holder by the fastening element.

Optoelectronic component and method for the production thereof

An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.

Optoelectronic semiconductor component

A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Carrier substrate and method for producing semiconductor chips

An optoelectronic semiconductor chip includes a semiconductor body that has a semiconductor layer sequence and at least one opening that extends through a second semiconductor layer into a first semiconductor layer. The chip also includes a support, which includes at least one recess, and a metallic connecting layer between the semiconductor body and the support. The metallic connecting layer includes a first region and a second region. The first region is connected to the first semiconductor layer in an electrically conductive manner through the opening and the second region is connected to the second semiconductor layer in an electrically conductive manner. A first contact is connected to the first region in an electrically conductive manner through the recess or a second contact is connected to the second region in an electrically conductive manner through the recess.

Method for producing a plurality of optoelectronic semiconductor chips, and optoelectronic semiconductor chip

In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A method is provided for connecting parts to be joined. A first layer sequence is applied to a first part to be joined. The first layer sequence contains silver. A second layer sequence is applied to a second part to be joined. The second layer sequence contains indium and bismuth. The first layer sequence and the second layer sequence are pressed together at their end faces respectively remote from the first part to be joined and the second part to be joined through application of a joining pressure at a joining temperature which amounts to at most 120&#xb0; C. for a predetermined joining time. The first layer sequence and the second layer sequence fuse together to form a bonding layer which directly adjoins the first part to be joined and the second part to be joined and the melting temperature of which amounts to at least 260&#xb0; C.

Process for connecting joining parts

An optoelectronic lighting device includes a lighting module with an optoelectronic semiconductor chip. A connection carrier has a first main surface and a second main surface facing away from the first main surface. The lighting module is arranged on the first main surface of the connection carrier, and the connection carrier adheres to a heat sink on account of a magnetic attraction.

Optoelectronic lighting device and method for producing an optoelectronic lighting device

A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.

Method of producing an optoelectronic semiconductor chip

The invention relates to a light-emitting semiconductor component, comprising&#x2014;a first semiconductor body (), which comprises an active zone () in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body () through a radiation exit surface (), and&#x2014;a second semiconductor body (), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein&#x2014;the first semiconductor body () and the second semiconductor body () are produced separately from each other, &#x2014;the second semiconductor body () is electrically inactive, and&#x2014;the second semiconductor body () is in direct contact with the radiation exit surface () and is attached there to the first semiconductor body () without connecting means.

An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.

Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component

In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K.

Optoelectronic semiconductor component, and method for the manufacture of an optoelectronic semiconductor component

A composite substrate for a semiconductor chip includes a first covering layer containing a semiconductor material, a second covering layer, and a core layer arranged between the first covering layer and the second covering layer, wherein the core layer has a greater coefficient of thermal expansion than the covering layers.

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Wuppertal, Germany

Andreas Plöβl