Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Andreas Plössl

Berthold Hahn

Volker Härle

Stephan Kaiser

Michael Fehrer

Gertrud Kräuter

Vincent Grolier

Frank Otte

Thomas Schwarz

Norwin Von Malm

Stefan Illek

Ulrich Jacob

Frank Singer

Ralph Wirth

Alexander F Pfeuffer

Martin Rudolf Behringer

Jörg Erich Sorg

Walter Wegleiter

Dominik Scholz

Klaus Streubel

Rainer Butendeich

Heribert Zull

Alexander Martin

Helmut Fischer

Christoph Schwarzmaier

Marianne Renner

The invention relates to a method for producing optoelectronic components. The invention comprises: provision of a metal substrate, the substrate having a front side and a rear side opposite the front side; front-side removal of substrate material such that the substrate comprises substrate sections protruding in the region of the front side and recesses arranged there between; formation of a plastic body adjacent to substrate sections; arrangement of optoelectronic semiconductor chips on substrate sections; rear-side removal of substrate material in the region of the recesses, such that the substrate is structured into separate substrate sections; and performance of a separation process. The plastic body is divided into separate substrate sections and individual optoelectronic components with at least one optoelectronic semiconductor chip are formed. The invention also relates to an optoelectronic component.

Production of optoelectronic components

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Method of producing a semiconductor component

A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Method of producing an optoelectronic component, and optoelectronic component

A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

Module for a video wall

A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.

Radiation-emitting semiconductor chip and method of producing radiation-emitting semiconductor chips

The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly (), which comprises a carrier body (), an intermediate layer () arranged on an outer surface () of the carrier body (), and a use layer () arranged on the intermediate layer (); introducing at least two openings (), which are mutually spaced in the lateral direction (L), in the use layer () via an outer surface () of the use layer (), wherein the openings extend completely through the use layer () in the vertical direction (V); electrically insulating lateral surfaces () of the openings () and of the outer face () of the use layer (); arranging electrically conductive material () at least in the openings (), wherein after completion of the terminal carrier (), the electrically conductive material () has an interruption (U) in the progression thereof along the outer surface () of the use layer () in the lateral direction (L) between adjoining openings ().

Method for producing an electrical terminal support

A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.

Converter plate, a radiation-emitting device having such a converter plate and a method of producing such a converter plate

An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.

Optoelectronic semiconductor chip with gas-filled mirror

A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.

Radiation-emitting optical component

Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Method for producing a semiconductor element

Method for producing a semiconductor component

On an epitaxy substrate (), a layer structure () provided for light-emitting diodes or other optoelectronic components using thin-film technology is produced and provided with a first connecting layer (), which comprises one or a plurality of solder materials. A second connecting layer () is applied over the whole area on a carrier () and permanently connected to the first connecting layer () by means of a soldering process.

Method for the production of an optoelectronic component using thin-film technology

A method for bonding several layers, which comprise at least one thermally bondable material, by means of a joint layer produced with the aid of thermocompression at least one of the layers comprising a semiconductor material, as well as to a correspondingly manufactured device. Also disclosed is a method for manufacturing an organic light-emitting diode and an organic light-emitting diode that is encapsulated between two cover layers with the aid of thermocompression.

Method for bonding layers, corresponding device and organic light-emitting diode

A device comprising a first component () having a first surface (), a second component () having a second surface () and a connection layer () between the first surface () of the first component () and the second surface () of the second component (), wherein the connection layer () comprises an electrically insulating adhesive and there is an electrically conductive contact between the first surface () of the first component () and the second surface () of the second component ().

Growing community of inventors

Wuppertal, Germany

Andreas Plössl