Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Osram Oledgmbh

Andreas Ploessl

Stefan Illek

Berthold Hahn

Stephan Kaiser

Ralph Wirth

Wilhelm Stein

Frank Singer

Johannes Baur

Matthias Sabathil

Walter Wegleiter

Michael Fehrer

Bernd Boehm

Hubert Halbritter

Volker Härle

Patrick Rode

Lutz Hoeppel

Klaus Streubel

Franz Eberhard

Ines Pietzonka

Peter Stauss

Heribert Zull

Roland Enzmann

Roland Schulz

Juergen Moosburger

Mathias Wendt

Dieter Eissler

Marcus Zenger

Matthias Winter

Georg Rossbach

Gudrun Diepold

Thomas Schwarz

Norwin Von Malm

Siegfried Herrmann

Korbinian Perzlmaier

Dominik Eisert

Karl Engl

Christian Leirer

Stefan Groetsch

Tobias Meyer

Alexander Linkov

Dominik Scholz

Markus Maute

Bernd Barchmann

Simeon Katz

Lorenzo Zini

Alexander Martin

Martin Haushalter

Mathias Kaempf

Peter Nagel

Vincent Grolier

Jens Dennemarck

Markus Arzberger

Thomas Veit

Christopher Koelper

Paola Altieri-Weimar

Barbara Behr

Ingo Neudecker

Alexander Heindl

Klaus Mueller

Fabian Eigenmann

Walter Wegletter

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Optically effective element, method of producing an optically effective element, and optoelectronic component

A method for fastening a semiconductor chip on a substrate and an electronic component are disclosed. In an embodiment a method includes providing a semiconductor chip, applying a solder metal layer sequence on the semiconductor chip, providing a substrate, applying a metallization layer sequence on the substrate, applying the semiconductor chip on the substrate via the solder metal layer sequence and the metallization layer sequence and heating the applied semiconductor chip on the substrate for fastening the semiconductor chip on the substrate. The solder metal layer may include a first metallic layer comprising an indium-tin alloy, a barrier layer arranged above the first metallic layer and a second metallic layer comprising gold arranged between the barrier layer and the semiconductor chip, wherein an amount of substance of the gold in the second metallic layer is greater than an amount of substance of tin in the first metallic layer.

Method for fastening a semiconductor chip on a substrate, and electronic component

An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.

Optoelectronic component and method for the production thereof

A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.

Component having a buffer layer and method for producing a component

The method for assembling a carrier comprises a step A), in which a plurality of pigments (), each with an electronic component (), is provided. Further, each pigment comprises a meltable solder material () directly adjoining a mounting side () of the component. At least 63% by volume of each pigment is formed by the solder material. The mounting side of each component has a higher wettability with the molten solder material than a top side () and a side surface () of the component. In a step B), a carrier () with pigment landing areas () is provided, the pigment landing areas having higher wettability with the molten solder material of the pigments than the regions laterally adjacent to the pigment landing areas and than the side surfaces and the top sides of the components. In a step C), the pigments are applied to the carrier. In a step D), the pigments are heated so that the solder material melts.

Method for assembling a carrier with components, pigment for assembling a carrier with a component and method for producing a pigment

An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.

Light-emitting component and method of producing a light-emitting component

An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

Assembly including a carrier having a glass material and an optoelectronic semiconductor component

An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.

Optoelectronic semiconductor device and apparatus with an optoelectronic semiconductor device

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the component includes a semiconductor chip, a molded body and an electrical through-contact constituting an electrically conductive connection through the molded body. The through-contact and the semiconductor chip are embedded alongside one another and are spaced apart in the molded body. A first contact pad of the through-contact is arranged at an underside of the molded body. A second contact pad of the through-contact is arranged at a top side of the molded body. The second contact pad is electrically conductively connected to the electrical contact of the semiconductor chip. The through-contact is arranged such that a molded body is arranged at least in a section between the first and second contact pads on a straight line between the first and second contact pads.

Optoelectronic component and production method therefor

A method for producing a plurality of optoelectronic semiconductor components () is provided, comprising the following steps: a) providing an auxiliary carrier (); b) providing a plurality of semiconductor chips (), wherein each of the semiconductor chips has a carrier body () and a semiconductor body () arranged on an upper side () of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (); f) removing the auxiliary carrier (); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components ().

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

Electronic device and method for producing an electronic device

A method for producing a multiplicity of semiconductor chips () is provided, comprising the following steps: &#x2014;providing a wafer () comprising a multiplicity of semiconductor bodies (), wherein separating lines () are arranged between the semiconductor bodies (), &#x2014;depositing a contact layer () on the wafer (), wherein the material of the contact layer () is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer () has a thickness of between 8 nanometers and 250 nanometers, inclusive, &#x2014;applying the wafer () to a film (), &#x2014;at least partially severing the wafer () in the vertical direction along the separating lines () or introducing fracture nuclei () into the wafer () along the separating lines (), and &#x2014;breaking the wafer () along the separating lines () or expanding the film () such that a spatial separation of the semiconductor chips () takes place, wherein the contact layer () is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.

Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (); B) growing at least one semiconductor layer () epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer () to the semiconductor layer (); D) applying at least one contact layer () for electronic contacting of the component; E) detaching the growth substrate () from the semiconductor layer (), so exposing a surface of the semiconductor layer (); and F) structuring the semiconductor layer () by means of an etching method from the side of the surface which was exposed in method step E).

Described is an optoelectronic semiconductor chip () with a built-in bridging element (A) for overvoltage protection.

Optoelectronic semiconductor chip with built-in ESD protection

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Wuppertal, Germany

Andreas Ploessl