Siltronic Ag

Pva Tepla Ag

Andreas Muehe

Klaus Roettger

Alfred Miller

Leszek Mistur

Herbert Becker

Johann-Andreas Huber

A method for pulling a cylindrical crystal from a melt by a crystal pulling unit includes measuring an actual value of a diameter of the crystal at a surface of the melt, comparing the actual value with a setpoint value for the diameter of the crystal, and setting a height of the annular gap as a function of a deviation between the actual value and the setpoint value using a first controller which has a first readjustment time.

Method for pulling a cylindrical crystal from a melt

A monocrystalline semiconductor wafers have an average roughness Rof at most 0.8 nm at a limiting wavelength of 250 &#x3bc;m, and an ESFQRof 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order:

Monocrystalline semiconductor wafer and method for producing a semiconductor wafer

A device for pulling a single crystal from a melt having a widened portion between an upper and a lower neck portion including a pulling device having a pulling device cable drum configured to wind a pulling cable, the pulling cable configured to pull the single crystal and a supporting device configured to relieve the upper neck portion of a weight of the single crystal.

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Wetzlar, Germany

Andreas Muehe