Schott Ag

Schott Glas

Schott Ml Gmbh

Other

Andreas Menzel

Jochen Alkemper

Lutz Parthier

Hartmut Bauch

Ute Natura

Matthias Mueller

Thomas Schmiady

Frank Coriand

Andreas Voitsch

Gordon Von Der Goenna

Matthias Schmidt

Oliver Sohr

Joerg Kandler

Wolfgang Schmidt

Rolf Martin

Lars Ortmann

Walter Nadrag

Andreas Weisleder

Frank Elsmann

Norman Schoenherr

Roland Scholz

Jochen Sigmund

Thomas Schindelbeck

Frank Rudiger

Christine Fugger

Hraban Hack

Rainer Guett

Chistine Fugger

Gordon Von Der Gönna

A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.

Method for manufacturing silicone wafers

A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material In this way, crystals can be obtained which after tempering have a BSDF value of &#x3c;7&#xd7;10, an RMS homogeneity after the subtraction of 36 Zernike coefficients of &#x3c;15&#xd7;10, an SDR-RMS value in the 111 direction of &#x3c;0.2 nm/cm.

Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards

Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10or 5*10.

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The method provides CaFsingle crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaFstarting material is heat-treated for at least five hours at temperatures between 1000&#xb0; C. and 1250&#xb0; C. and then sublimed at a sublimation temperature of at least 1100&#xb0; C. in a vacuum of at most 5*10mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500&#xb0; C., which is at least 20&#xb0; C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaFstarting material including waste material and cuttings from previously used melts.

For producing large volume optical components of high optical quality from synthetic quartz glass blanks, the latter are heated in a component mold in a furnace with a protective gas atmosphere to a temperature 50&#xb0; to 170&#xb0; K above the softening point, this temperature being held for 20 to 90 minutes and, during this holding time, the quartz glass blank being pressed into the component mold. By these means, a gentle treatment of the quartz glass, a good yield, a decrease in the energy input and a complete filling up of the component mold are achieved.

Method for producing optical components

A synthetic quartz glass preform is produced by flame hydrolysis with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. The preform has a core area which contains &#x2267;1150 ppm OH, a strain double refraction of &#x2266;5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of &#x394;T &#x2266;0.1%/cm thickness. The quartz glass has been exposed to the following radiation: wavelength &#x3bb;=248 nm, laser shot frequency &#x2267;300 Hz, laser shot value &#x2267;10and lumination &#x2266;10 mJ/cm, and wavelength &#x3bb;=193 nm, laser shot frequency &#x2267;300 Hz, laser shot value &#x2267;10and lumination &#x3c;5 mJ/cm. Apparatus for producing the preform comprises a horizontally positioned muffle with two different sized openings facing each other. The larger of the openings is for removing the preform, the smaller opening being for introducing a burner. The internal chamber of the muffle narrows from the larger opening to the smaller opening.

Apparatus for producing synthetic quartz glass

A device for producing optically homogeneous, streak-free quartz glass bodies having a large diameter including a furnace or melting device having an inner chamber with a pair of openings opposite one another. One or more movable burners are displaceable into one of the openings and the respective glass body to be produced is located in the other opening. Both the burner and glass body are movably positioned. In the course of the production of the quartz glass body, a relative movement is effected in the axial and radial directions between the burner and the quartz glass body such that the distance from the burner outlet opening pertaining to the quartz glass body decreases as the distance from the burner to the X-X axis of the quartz glass body increases.

Device for generating an optically homogeneous, streak-free quartz glass body having a large diameter

A method produces homogenous quartz glass plates without streaks. The method is applied to starting quartz glass body which has an X&mdash;X geometrical axis and good refractive index homogeneity in its central area, and a refractive index homogeneity decreasing as the axis lies further from a central area. The body is divided into at least two concave parts by longitudinal cuts parallel to the axis once the central area has been processed out of the body. The parts are placed separately in corresponding molds and heated therein such that they are molded to form quartz glass plates having a desired thickness.

Quartz glass plates with high refractive index homogeneity

The invention relates to a synthetic quartz glass preform which is produced according to the flame hydrolysis technique with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. Said preform has a core area which contains &gE;1150 ppm OH, a strain double refraction of &lE;5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of &Dgr; T &lE;0.1 %/cm thickness. The quartz glass has been exposed to the following radiation: wavelength &lgr; &equals;248 nm, laser shot frequency &gE;300 Hz, laser shot value &gE;10 and rumination &lE;10 mJ/cm , and wavelength &lgr; &equals;193 nm, laser shot frequency &gE;300 Hz, laser shot value &gE;10 and rumination &lE;5 mJ/cm . A device for producing said preform comprises a horizontally positioned muffle with two different-sized openings facing each other. The larger of said openings is for removing the preform, the smaller opening being for introducing a burner. The internal chamber of the muffle narrows from the larger opening to the smaller opening.

Synthetic quartz glass preform

In a method for producing a streak-free quartz glass sheet with a highly homogeneous degree of refraction, a quartz glass rod is lowered into a melting pot parallel to a longitudinal axis of the quartz glass rod. A cross-section of the melting pot is larger than a cross-section of the quartz glass rod and determines a contour of the quartz glass sheet. The quartz glass rod is heated in the melting pot to a flow temperature whereupon the quartz glass rod is lowered until the quartz glass rod melts and a height of the quartz glass flowing in the melting pot reaches a desired quartz glass sheet thickness. The melting pot and the quartz glass rod move relative to each other in a direction which is perpendicular to the longitudinal axis of the quartz glass rod during the melting process. Preferably, the movement involves a rotational and a transverse movement.

Method and device for producing a homogenous sheet of quartz glass without streaks

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Jena, Germany

Andreas Menzel