Toppan Printing Co., Ltd.

Leybold Aktiengesellschaft

Robert Boschgmbh

Andreas Meier

Mitsuru Kano

Thomas Krug

Mamoru Sekiguchi

Gerhard Steiniger

Takashi Miyamoto

Thomas Wiesa

Noboru Sasaki

Mika Gamo

Helmut Grimm

Stefan Huehner

Willi Schmidt

Bernd Maihoefer

Gerhard Genter

Klemens Ruebsam

David Tastekin

Nobuhiko Imai

Hiroyuki Yasujima

Ulrich Speh

Qiang Hou

Joerg Schaefer

Zhenzhong Shi

David Cello

Sebastian Goepfert

Hao Jin

Gunther Lieb

Alexandra Leonhard

Mark Leverkoehne

The present invention relates to a circuit substrate arrangement comprising a base layer () made from aluminium, a circuit layer () made from copper, a dielectric layer () arranged between the base layer () and the circuit layer (), an opening () passing through the base layer (), the circuit layer () and the dielectric layer () and an electrical contact () between the base layer () and the circuit layer (), wherein the electrical contact () comprises a rivet (), wherein a frictionally connected joint () is formed between the rivet () and the base layer () and wherein an integrally bonded joint () is formed between the rivet () and the circuit layer ().

Circuit substrate arrangement with improved electrical contact

The present invention relates to a contact arrangement (), preferably for a power electronics system, comprising a printed circuit board () with a fastening hole (), comprising a metal sleeve () which is inserted into the fastening hole (), wherein the sleeve () makes contact with, preferably is soldered to, the printed circuit board (), comprising a base () on which the sleeve () lies in order to make electrical contact, and comprising a fastening element () which protrudes through the sleeve (), wherein one end of the fastening element () is fixedly connected to the base () and a head () is formed or arranged at the other end, wherein the head () of the fastening element () lies only on the sleeve () and not on the printed circuit board (), and wherein the sleeve () projects beyond the printed circuit board () by way of a first projection () on that side which faces the base (), wherein the first projection spaces apart the printed circuit board () and the base ().

Contact arrangement, preferably for a power electronics system

This invention relates to a source material for vapor deposition, which is useful for forming a magnesium oxide thin film by vacuum vapor deposition process, and to a method of forming a transparent barrier film by using the magnesium oxide source material. The source material is composed of a magnesium oxide having a bulk density of 2.5 g/ml or more. This magnesium oxide can be obtained by sintering or fusing magnesium oxide material. For producing a transparent barrier film having a gas barrier property, this magnesium oxide is vapor-deposited on a surface of a transparent plastic base film by means of vacuum vapor deposition. The volume shrinkage or cracking of the evaporation source material can be avoided, thereby stabilizing the evaporation and prolonging duration of the evaporation. Further, it is possible to utilize a high power of electron beam. Since the evaporation source material is substantially free from pore, the evacuation of gas from the evaporation apparatus can be finished within a short period of time, and the vacuum degree within the evaporation apparatus can be stabilized. Since there is no splash or scattering during the evaporation., a transparent barrier film which is uniform in thickness and free from pinhole can be obtained.

Evaporation method of forming transparent barrier film

The invention relates to a vacuum coating installation comprising a container (9) in which is disposed the material (10) to be vaporized, for example SiO. The vaporization of the material (10) herein takes place by means of an electron beam gun (11) or by means of a vaporization oven. Opposing the surface of the material to be vaporized (10) is provided a synthetic film (5) to be coated which is transported further by means of a transport arrangement (4, 6, 22 to 27). Into the space between the material (10) to be vaporized and the material (5) to be coated a microwave is irradiated from an horn antenna (13).

Vacuum coating installation

The invention relates to a method for the aftertreatment of an oxide coating, and specifically an SiO.sub.x coating on a synthetic film. In this aftertreatment the oxide coating is exposed to a plasma whose particles effect positive changes of the oxide coating.

Method for treating an oxide coating

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Pfullingen, Germany

Andreas Meier