Siemens Aktiengesellschaft

Andreas M&auml;tzler

Thomas Laska

Martin Matschitsch

Gernot Moik

Herbert Mascher

Werner Stefaner

To markedly reduce wafer warping of semiconductor wafers without weakening the strength of adhesion to substrate materials, a novel back side metallizing system is presented. On a silicon semiconductor body an aluminum layer and a diffusion barrier layer that includes titanium are provided. A titanium nitride layer is incorporated into the titanium layer because it has been demonstrated that the titanium nitride layer can compensate for a large proportion of the wafer warping that occurs. Preferably, the usual tempering for improving the ohmic contact between the aluminum layer and the silicon semiconductor body is not performed after the complete metallizing of the semiconductor body, but rather after a first, thin aluminum layer has been deposited onto the silicon semiconductor body.

Growing community of inventors

Bodensorf, Austria

Andreas Mätzler

Growing community of inventors

Bodensorf, Austria

Andreas M&auml;tzler

Andreas Mätzler