Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Technische Hochschule Wildau

Andreas Mai

Patrick Steglich

Christian Mai

Sigurd Schrader

Catherine Dubourdieu

Veeresh Deshpande

Dong-Jik Kim

The present invention relates to producing an electro-optical phase shifter such that it may be integrated into a front-end of line of an electronic-photonic integrated circuit. A conducting bottom layer with a first refractive index is provided. A center layer including a ferroelectric material and with a second refractive index is provided on top of a first region of the conducting bottom layer, such that the center layer is not on top of a second region of the conducting bottom layer. A conducting top layer with a third refractive index is provided on top of the center layer. The second refractive index is lower than the first refractive index and lower than the third refractive index, such that the conducting bottom layer, the center layer, and the conducting top layer form a slot waveguide. A first electrical connector which connects the second region of the conducting bottom layer with an upper layer is provided. Additionally, a second electrical connector which connects the conducting top layer with the upper layer is provided. A first electrode and a second electrode are provided in the upper layer such that the first electrode connects to the second region of the conducting bottom layer via the first electrical connector and the second electrode connects to the conducting top layer via the second electrical connector.

Method for producing an electro-optical phase shifter based on ferroelectric materials

The present invention relates to a slot waveguide formed by a vertical material stack comprising a top layer with a first refractive index, a center layer including a ferroelectric material and with a second refractive index, and a SiGepseudosubstrate layer with 0<x≤1 and with a third refractive index. The center layer is grown on the SiGepseudosubstrate layer. The second refractive index is lower than the first refractive index and lower than the third refractive index. The slot waveguide can be included in a phase-shifter including two vertically arranged electrodes configured for providing a vertical electrical field (E) extending between the top layer and the bottom layer of the slot waveguide and for providing a complementary-metal-oxide-semiconductor compatible driver voltage. The phase-shifter can be configured for providing a linear electro-optical effect inside the center layer of the slot waveguide.

Slot waveguide for a phase shifter based on ferroelectric materials

The invention relates to a photonic sensor chip comprising a semiconductor substrate with a cavity extending from a back side through an entire depth of the semiconductor substrate, a photonic plane located on the front side of the semiconductor substrate. The chip includes a photonic particle sensor element with an active-surface element having an exposed active surface facing towards the back side of the semiconductor substrate, for capturing selected particles from at least one fluid or gas to which the active surface is exposable. The cavity provides access to the active surface from the back side. The photonic particle sensor element receives an optical input wave via the photonic plane, to expose captured particles on the active-surface element to interaction with the optical input wave and to provide a resulting optical output wave having a spectral component indicative of the interaction between the optical input wave and captured particles.

Photonic sensor chip, packaged photonic sensor device and arrangement

The invention relates to an electrooptical device comprising a semiconductor substrate having a front side and a back side, at least one photonic component arranged on the front side of the semiconductor substrate, the photonic component comprising an active layer made of a non-linear optical material, wherein at least one cavity, extends through the semiconductor substrate and connects the active layer on the front side of the semiconductor substrate with the back side of the semiconductor substrate.

Growing community of inventors

Frankfurt-am-Main, Germany

Andreas Mai