Applied Materials, Inc.

Applied Materials Gmbh & Co Kg

Andreas Lopp

Stefan Bangert

Wolfgang Buschbeck

Dieter Haas

Tobias Stolley

Jose Manuel Dieguez-Campo

Thomas Gebele

Thomas Deppisch

Daniele Gislon

Tommaso Vercesi

Uwe Schüssler

Jörg Krempel-Hesse

Frank Schnappenberger

Marcus Bender

Oliver Heimel

Andreas Klöppel

Ralph Lindenberg

Juergen Henrich

Markus Hanika

Fabio Pieralisi

Frank Fuchs

Michael Konig

Evelyn Scheer

Susanne Schlaefer

Harald Rost

Jurgen Schroeder

Guido Mahnke

Karl-Albert Keim

Jian Liu

Wolfgang Krock

Juergen Grillmayer

Harald Wurster

Götz Görisch

Jürgen Grillmayer

Annemarie Flock

A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.

Temperature-controlled shield, material deposition apparatus and method for depositing a material onto a substrate

One or more heating assemblies for a material deposition apparatus for pre-heating a substrate before entering a material deposition area and/or for post-heating the substrate after exiting the material deposition area are described.

Material deposition apparatus having at least one heating assembly and method for pre- and/or post-heating a substrate

A vapor deposition apparatus is described. The vapor deposition apparatus includes a substrate support for supporting a substrate to be coated; a vapor source with a plurality of nozzles for directing vapor toward the substrate support through a vapor propagation volume; and a heatable shield extending from the vapor source toward the substrate support. The heatable shield surrounds the vapor propagation volume at least partially and includes an edge exclusion portion for masking areas of the substrate not to be coated. The substrate support may be a rotatable drum with a curved drum surface, and the vapor deposition apparatus may be configured to move the substrate on the curved drum surface past the vapor source in a circumferential direction.

Vapor deposition apparatus and method for coating a substrate in a vacuum chamber

A mask arrangement for masking a substrate in a processing chamber is provided. The mask arrangement includes a mask frame having one or more frame elements and is configured to support a mask device, wherein the mask device is connectable to the mask frame; and at least one actuator connectable to at least one frame element of the one or more frame elements, wherein the at least one actuator is configured to apply a force to the at least one frame element.

Mask arrangement for masking a substrate in a processing chamber, apparatus for depositing a layer on a substrate, and method for aligning a mask arrangement for masking a substrate in a processing chamber

A method of operating a deposition apparatus is provided. The method comprises: Deposition of an evaporated source material on a substrate by guiding the evaporated source material from one or more outlets of an evaporation source toward the substrate, wherein part of the evaporated source material is blocked by and attaches to a shielding device arranged between the one or more outlets and the substrate, followed by a cleaning of the shielding device by at least locally heating the shielding device for releasing at least part of the attached source material from the shielding device. According to a further aspect, a deposition apparatus is provided that can be operated according to the described methods.

Methods of operating a deposition apparatus, and deposition apparatus

The disclosure relates to a magnet arrangement for a sputtering system, wherein the magnet arrangement is adapted for a rotatable target of a sputtering system and includes: a first magnet element extending along a first axis; a second magnet element being disposed around the first magnet element symmetrically to a first plane; wherein the second magnet element includes at least one magnet section intersecting the first plane; and wherein a magnetic axis of the at least one magnet section is inclined with respect to a second plane being orthogonal to the first axis. Further, the disclosure relates to a target backing tube for a rotatable target of a sputtering system, a cylindrical rotatable target for a sputtering system, and a sputtering system.

Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

A dynamic load lock chamber that includes a plurality of actuators positioned along its length to achieve a desired pressure gradient from an atmospheric pressure side to a processing pressure side of the chamber is provided. The chamber includes a transport belt continuously running through the chamber to transport substrates from the atmospheric pressure side to the processing pressure side of the chamber, if situated on an inlet side of a production line, and from the processing pressure side to the atmospheric pressure side of the chamber, if positioned on an outlet side of the production line. Separation mechanisms may be attached to the belt to separate discrete regions within the chamber into a plurality of discrete volumes. Substrates may be disposed between the separation mechanisms, such that separation between adjacent pressure regions within the chamber is maintained as the substrates are transported through the chamber.

Dynamic load lock with cellular structure for discrete substrates

This invention relates to a coater for the coating, in particular, of large-area substrates by means of cathode sputtering, the coater having a coating chamber and, provided therein, a cathode assembly () where the material to be sputtered is located on a target () with a curved surface, the material to be sputtered being located, in particular, on the lateral surface of a cylinder, there being in a single coating chamber for a coherent coating zone at least three, preferably more, cathode assemblies () with rotatable, curved targets () positioned one beside the other.

Coater with a large-area assembly of rotatable magnetrons

The invention relates to a method for operating a magnetron sputter cathode, in particular a tube cathode or several tube cathodes forming an array. In such cathodes a target passes through a magnetic field, whereby induction currents flow in the target which distort the magnetic field. This results in the nonuniform coating of a substrate. By having the relative movement between magnetic field and target alternately reverse its direction, the effect of the magnetic field distortion can be compensated. This yields greater uniformity of the coating on a substrate to be coated.

Method for operating a sputter cathode with a target

A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the same value. In one version, an additional perpendicular motion is effected. The magnet arrangement is designed so that north and south pole interlock and waviform racetracks are generated. This enables constant sputtering from the entire target surface.

Magnet arrangement for a planar magnetron

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Freigericht-Somborn, Germany

Andreas Lopp