Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Andreas Loeffler

Alfred Lell

Christoph Eichler

Bernhard Stojetz

André Somers

Sven Gerhard

Matthias Peter

Clemens Vierheilig

Christian Leirer

Joachim Hertkorn

Tobias Meyer

Alexander Walter

Juergen Off

Harald Koenig

Adam Bauer

Dario Schiavon

Michael Binder

Christoph Walter

Thomas Hager

Disclosed is a conversion element () comprising an active region () that is formed by a semiconductor material and includes a plurality of barriers () and quantum troughs (), a plurality of first structural elements () on a top face (la) of the conversion element (), and a plurality of second structural elements () and/or third structural elements () which are arranged on a face of the active region () facing away from the plurality of first structural elements (). Also disclosed is a method for producing a conversion element of said type.

Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type

The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

Semiconductor laser

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15&#xb0;, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

Semiconductor light source

A method for producing a semiconductor chip () is provided, in which, during a growth process for growing a first semiconductor layer (), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (), such that a lateral variation of a material composition of the first semiconductor layer () is produced. A semiconductor chip () is additionally provided.

Method for producing a semiconductor chip and semiconductor chip

An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.

Arrangement

The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.

A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.

Laser bars having trenches

A light-emitting semiconductor chip () is provided, having a first semiconductor layer (), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ().

Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip

The invention describes a radiation-emitting semiconductor component () having a first semiconductor layer sequence () which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (), a first electrode area () and a second electrode area (). It is provided that the second semiconductor layer sequence () has a quantum pot structure () with a quantum layer structure () and a barrier layer structure () and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence () by the first electrode area () and the second electrode area ().

Radiation-emitting semiconductor device

A semiconductor chip () is provided, having a first semiconductor layer (), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ().

Semiconductor chip and method for producing a semiconductor chip

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Growing community of inventors

Neutraubling, Germany

Andreas Loeffler