Infineon Technologies Ag

Andreas Liebelt

Christoph Ludwig

Georg Georgakos

Elard Stein Von Kamienski

Jakob Kriz

Christoph Kutter

Kai Huckels

Peter Wawer

A nonvolatile NOR semiconductor memory device and a method for programming the memory device are described. The memory device has a multiplicity of one-transistor memory cells disposed in a matrix form being driven both via word lines and via bit lines. In this case, each one-transistor memory cell has both a source line and a drain line, as a result of which selective driving of the respective drain and source regions is obtained. In this way, a leakage current in the semiconductor memory device can be optimally reduced with minimal space requirement.

Nonvolatile nor semiconductor memory device and method for programming the memory device

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München, Germany

Andreas Liebelt