Infineon Technologies Ag

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Andreas Lenniger

Olaf Hohlfeld

Andre Uhlemann

Reinhold Bayerer

Daniel Domes

Dirk Siepe

Alfred Kemper

Gottfried Ferber

Stefan Hubert Schmies

Jens De Bock

Bjoern Rentemeister

Andreas Vetter

Wolfgang Budde

An electronic device includes: an interface configured to receive telemetry information for one or more power semiconductor devices; and a data acquisition and processing unit. The data acquisition and processing unit may be configured to periodically update an estimate of a remaining lifetime of the one or more power semiconductor devices, based on the telemetry information collected during use of the one or more power semiconductor devices and received at the interface. The data acquisition and processing unit may be configured to adjust one or more operating parameters for each of the one or more power semiconductor devices that has reached a predetermined level of degradation as determined by the telemetry information. An electronic system that includes the electronic device is also described.

Electronic device and electronic system that receives and processes telemetry information

A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1.

Semiconductor device including cladded base plate

A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

A semiconductor module has a housing () and a metal base plate (). A reliable yet easily producible force-transmitting connection between a semiconductor module and an external heat sink is provided by a mechanical pressure-proof counterpart () which is incorporated into the housing () and forms a firm connection () with a pressure-proof connecting element () on the base plate side. The connection is provided with a passage opening () for fastening the semiconductor module to the heat sink.

Connection between a semiconductor housing and a base plate comprising a passage opening for fastening to a heat sink

The invention relates to a method and also a device and a system for bonding a semiconductor element (), in which various contact areas () of the semiconductor element () are successively connected to terminal areas () by means of bonding wire elements () and in which an electrical variable influenced by the semiconductor element () is acquired during the bonding operation.

Method, device and system for bonding a semiconductor element

A power semiconductor module is presented in which terminal elements are press-fitted into openings in a plastic housing. This measure improves the reliability of the internal bonds between the substrate and the terminal element since there is no longer a risk of the terminal elements loosening in the plastic housing.

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Anroechte, Germany

Andreas Lenniger