Solarworld Innovations Gmbh

Deutsche Cell Gmbh

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Andreas Krause

Holger Neuhaus

Bernd Bitnar

Martin Kutzer

Bernhard Freudenberg

Marc Dietrich

Josef Stenzenberger

Frederick Bamberg

Juliane Walter

Lamine Sylla

Olaf Storbeck

Harald Hahn

Armin Müller

Jochen Friedrich

Kristian Schlegel

Kaspars Dadzis

Christian Koch

Mark Hollatz

Gerd Fischer

Reinhold Schlosser

Christian Reimann

Sara Grützner

Alexander Fulle

Bianca Gründig-Wendrock

Michael Heemeier

Doreen Nauert

Alexander Fülle

Matthias Trempa

Claudia Lengsfeld

Within the scope of a Silicon-wafer making, in which a silicon monocrystal seed is arranged in the bottom region of a crucible, wherein the silicon monocrystal seed has a seed surface with a {110}-crystal orientation parallel to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed, and in which the silicon block is split into Silicon-wafers in such a manner that a wafer surface has a {100}-crystal orientation, wherein the silicon monocrystal seed is manufactured from a silicon monocrystal block, the block axis of which has a [110]-spatial orientation, wherein the silicon monocrystal block is cut-off for forming the seed surface of the silicon monocrystal seed with the {110}-crystal orientation parallel to the block axis.

Method for manufacturing a silicon monocrystal seed and a silicon-wafer, silicon-wafer and silicon solar-cell

Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Device and method for producing silicon blocks

Method for producing a silicon ingot, comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one nucleation agent to assist a heterogeneous nucleation in the silicon melt, and control of the temperature in the container for the directed solidification of the silicon melt, the nucleation agent comprising nanoscale particles.

Method for producing a silicon ingot by solidification of a melt comprising a nucleation agent including nanoscale particles

The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon substrate. The invention in addition relates to a device for carrying out such a method, and a method for manufacturing a solar cell.

Examination of a silicon substrate for a solar cell

In order to produce silicon wafers, liquid ultra-pure silicon is solidified on a silicon monocrystalline seed arranged in the bottom area of a crucible and having a seed surface comprising a {110}-crystal orientation and an edge surface having a {100}-crystal orientation starting from the bottom of the crucible, thus forming a silicon block on the seed surface of the silicon monocrystalline seed which largely takes over the {110}-crystal orientation. Subsequently, the silicon block is divided into wafers with a wafer surface having a {100}-crystal orientation.

Method for producing silicon wafers, and silicon solar cell

In various embodiments, a method for fitting contact wires to a surface of a photovoltaic cell is provided. The method may include: feeding the contact wires to a contact wire positioning and placement device, wherein the contact wire positioning and placement device comprises a plurality of nozzles or eyes, wherein at least one contact wire is in each case passed through a respective nozzle or eye, for positioning and placement thereof onto the surface of the photovoltaic cell; positioning and placing the contact wires on the surface of the photovoltaic cell by means of the contact wire positioning and placement device; and attaching the contact wires to the surface of the photovoltaic cell.

Method for fitting contact wires to a surface of a photovoltaic cell, photovoltaic cell, photovoltaic module, arrangement for fitting contact wires to a surface of a photovoltaic cell

The invention relates to a method for masking a semiconductor substrate including the following steps: providing a planar semiconductor substrate having a first side and a second side lying opposite thereto, applying a mask to at least one of the sides, an extrusion printing method being used for applying the mask.

Masking method

A method for the production of a contact structure of a semiconductor component comprises the masking of at least one side of a semiconductor substrate with a coating and the partial removal thereof in at least one pre-determined region.

Method for producing a contact structure of a semiconductor component

A semiconductor component, especially a solar cell comprises a semiconductor substrate of a planar design having a first side and a second side lying opposite thereto, at least one contact structure arranged on at least one side of the semiconductor substrate, the at least one contact structure exhibiting a diffusion barrier to prevent the diffusion of ions from the contact structure into the semiconductor substrate.

Semiconductor component with contacts made of alloyed-in metal wires

A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50%, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are of an easily solderable material.

Semiconductor component

A method for the production of a contact structure of a solar cell allows p-contacts and n-contacts to be produced simultaneously.

Growing community of inventors

Radebeul, Germany

Andreas Krause