Globalfoundries U.S. Inc.

Andreas Knorr

Judson Robert Holt

Jagar Singh

Alexander M Derrickson

Vibhor Jain

Haiting Wang

Zhenyu Hu

Alexander Lee Martin

Alvin Jose Joseph

Richard Francis Taylor, Iii

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a silicon-on-insulator substrate including a semiconductor layer, a semiconductor substrate, and a dielectric layer between the semiconductor layer and the semiconductor substrate. The semiconductor substrate includes first and second doped regions, the first doped region has a first conductivity type, and the second doped region has a second conductivity type different from the first conductivity type. The structure further comprises first and second source/drain regions in the semiconductor layer, and a gate structure laterally between the first source/drain region and the second source/drain region. The first source/drain region overlaps with the first doped region, and the second source/drain region overlaps with the second doped region.

Field-effect transistors with heterogenous doped regions in the substrate of a silicon-on-insulator substrate

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

Lateral bipolar transistor

Disclosed is a semiconductor structure with a lateral bipolar junction transistor (BJT). This semiconductor structure can be readily integrated into advanced silicon-on-insulator (SOI) technology platforms. Furthermore, to maintain or improve upon performance characteristics (e.g., cut-off frequency (fT)/maximum oscillation frequency (fmax) and beta cut-off frequency) that would otherwise be negatively impacted due to changing of the orientation of the BJT from vertical to lateral, the semiconductor structure can further include a dielectric stress layer (e.g., a tensilely strained layer in the case of an NPN-type transistor or a compressively strained layer in the case of a PNP-type transistor) partially covering the lateral BJT for charge carrier mobility enhancement and the lateral BJT can be configured as a lateral heterojunction bipolar transistor (HBT). Also disclosed is a method for forming the semiconductor structure.

Lateral bipolar junction transistor including a stress layer and method

Growing community of inventors

Saratoga Springs, NY, United States of America

Andreas Knorr