Carl-Zeiss-Smt Ag

Andreas Kirchner

Bernhard Kneer

Hans-Jürgen Mann

Hans-Juergen Mann

For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Method for distortion correction in a microlithographic projection exposure apparatus

A method for correcting a field-constant astigmatism of a projection objective of a microlithography projection exposure apparatus, the projection objective having an arrangement composed of a plurality of optical elements that images at least a part of an object onto an off-axis image field lying outside at least one optical axis, the arrangement of the plurality of optical elements having a plane of symmetry that is defined by the at least one optical axis and a center of the image field, includes adjusting a position of at least one element of the plurality of optical elements in such a way that at least one linear and/or quadratic astigmatism is produced that compensates the field-constant astigmatism at least partially. A projection objective of a projection exposure apparatus, as well as a microlithographic method for producing micropatterned components uses the method.

Method for correcting astigmatism in a microlithography projection exposure apparatus, a projection objective of such a projection exposure apparatus, and a fabrication method for micropatterned components

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Lorch, Germany

Andreas Kirchner