Advanced Micro Devices Corporation

Andreas Huschka

Wolfram Kluge

Lutz Dathe

Rolf Jaehne

Heiko Kaluzni

Uwe Hahn

A high frequency multi-layer printed circuit board, according to the present invention, comprises a through connection having an impedance adapting structure surrounding the through connection and enabling an adjustment of the characteristic impedance of the through connection to a desired value. Thus, high frequency signals may be led through the printed circuit board with reduced signal deformation. The high frequency multi-layer printed circuit board is applicable for high frequency signals up to the GHz-range.

Multi-layer printed circuit board comprising a through connection for high frequency applications

An integrated circuit comprises an ESD protection circuit including an inductor coupled between an input terminal and a ground terminal at which an RF signal is applied. The inductor is designed so as to provide a sufficient current capability required in typical ESD events. Moreover, the inductance of the inductor is selected to define, in combination with any parasitic capacitance present, a resonance tank with a resonant frequency that is matched to the RF signal. Accordingly, the operating frequency of the integrated circuit is not limited by the ESD protection circuit. In a further embodiment, an output terminal is ESD protected by an inductor that is coupled to an auxiliary voltage serving to bias an output transistor. Moreover, clamping elements, such as diodes, are provided between the auxiliary voltage and the supply voltage and between the auxiliary voltage and ground potential.

ESD protection circuit for radio frequency input/output terminals in an integrated circuit

A tunable constant GM circuit allows to compensate for temperature and process variations with high precision by correspondingly adjusting a resistance value and/or the ratio of transistor widths. Thus, in switched capacitor circuits the frequency behaviour, such as the settling time, may be controlled by providing a compensated bias to the transconductance amplifiers typically used in these circuits.

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Dresden, Germany

Andreas Huschka