Raytheon Company

Andreas Hampp

Justin Gordon Adams Wehner

Daniel E Morse

Robert P Ginn

Kenneth Allen Gerber

Heather D Leifeste

Sean F Harris

Tamara H Wright

Amanda L Holt

Justin G Wehner

Talieh H Sadighi

Alexander C Childs

Bengi F Hanyaloglu

According to embodiments of the present disclosure, a method for removing oxide includes placing a sensor chip assembly having an oxide layer formed on a portion thereof within an enclosed and controlled environment. The portion of the sensor chip assembly is exposed to a reactive gas and a UV light to result in a substantial removal of the oxide layer formed on the portion of the sensor chip assembly.

System and method for removing oxide from a sensor clip assembly

In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.

Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate

The present disclosure relates, according to some embodiments, to compositions and devices operable for infra-red transmission and blocking comprising a layered structure having a first electrically conducting layer, a conjugated electrochromic polymer layer, an electrolyte layer and a second electrically conducting layer, wherein the first and second electrically conducting layers have an infrared transparency and the conjugated electrochromic polymers may be operable to be electrically switched between a transparent state that transmits infrared light to an opaque state that does not transmit infrared light. In some embodiments, a device of the disclosure may also have one or more outer substrates sandwiching the other layers. Some embodiments relate to single-layered devices. Some embodiments relate to combined layers. Compositions and devices of the disclosure may be integrated into a wide variety of infrared systems for transmission, shuttering and calibration applications.

Polymer shutter compositions and devices for infrared systems

A method for manipulating light comprises receiving an incoming beam of light at a tunable optical device, the tunable optical device comprising an organic material having an optical property that can be selectively varied under the influence of an external bias. The method further comprises applying a selected external bias to the tunable optical device to change an optical property of the tunable optical device. The method also comprises controlling an optical property of a beam of light exiting the tunable optical device as a result of the selected external bias.

Organic layers for tunable optical devices

InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.

Growing community of inventors

Santa Barbara, CA, United States of America

Andreas Hampp