Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Albert-ludwigs-universitat Freiburg

Andreas Grohe

Oliver Schultz-Wittmann

Ralf Preu

Jan-Frederik Nekarda

Daniel Biro

Andreas Wolf

Daniel Kray

Stefan Glunz

Ansgar Mette

Kuno Mayer

Jochen Rentsch

Filip Granek

Marc Hofmann

Monica Aleman

A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Method for local contacting and local doping of a semiconductor layer

The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Method for the precision processing of substrates

A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.

Method for applying a structure to a semiconductor element

The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.

Method for metallizing semiconductor elements and use thereof

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Freiburg, Germany

Andreas Grohe