Infineon Technologies Ag

Infineon Technologies Dresden Gmbh

Andreas Greiner

Jens Schneider

Joerg Ortner

Ralf Rudolf

Dieter Kaiser

Felix Braun

Tarja Hauck

Josef Campidell

Heiko Aßmann

Karsten Friedrich

Udo Goetschkes

Alessia Sciré

Marcus Dankelmann

Morgana Nicolo

Carolin Wetzig

Stefan Doering

Dietrich Burmeister

In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

Method for producing a self-aligning masking layer

A method for processing a carrier may include forming at least one recess structure at least one of over and in the carrier; and annealing the at least one recess structure such that at least one hollow chamber is formed by material of the at least one recess structure, wherein the at least one hollow chamber may form an optical alignment structure.

Method of processing a carrier with alignment marks

An alignment mark definer is configured to provide a geometrical definition for an actual alignment structure to be formed at a temporary surface of a substrate based on a desired appearance of the alignment mark and on an expected alteration of an appearance of the actual alignment structure caused by a deposition material deposited on the temporary surface and the actual alignment structure.

Alignment mark definer

Growing community of inventors

Grosserkmannsdorf, Germany

Andreas Greiner