Siemens Aktiengesellschaft

Andreas Glasl

Helmuth Murrmann

A semiconductor device having one or more electrodes thereon composed of doped polycrystalline silicon. Initially undoped polycrystalline silicon is applied at select electrode positions of a semiconductor device and is then doped by diffusion or implantation. The resultant device is characterized by a high current amplification, a low inner path of resistance and low noise.

Contact electrode for semiconductor component

The 'emitter-dip effect' is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a select dopant through the undoped polycrystalline semiconductor layer into the select zone of the semiconductor body.

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Haar, Germany

Andreas Glasl