International Business Machines Corporation

Qucor Pty Limited

Andreas Fuhrer

Stefan Filipp

Marc Ganzhorn

Nikolaj Moll

Daniel Josef Egger

Gian R Von Salis

Veeresh Vidyadhar Deshpande

Ute Drechsler

Michelle Yvonne Simmons

Gian R Salis

Martin Fuechsle

Bent Weber

Thilo Curd Gerhard Reusch

Wilson Pok

Andreas Kuhlmann

Frank Ruess

Techniques relate to operating a quantum processing device is provided. The device includes at least two fixed-frequency quantum circuits coupled to a frequency-tunable coupler. The frequency of the coupler can be modulated so as to drive at least two selectively addressable energy transitions in the quantum processing device. The method includes modulating the frequency of the coupler so as to drive two first-order energy transitions. This is done so as to transfer (at least partly) an excitation of one of the quantum circuits to at least another one of the quantum circuits, via the tunable coupler. Related quantum processing devices are also provided.

Fast quantum gates with first-order transitions via frequency-modulated tunable coupling element

Embodiments are directed to a superconducting microwave circuit. The circuit includes a substrate and two electrodes. The latter form an electrode pair dimensioned so as to support an electromagnetic field, which allows the circuit to be operated in the microwave domain. The substrate exhibits a raised portion, which includes a top surface and two lateral surfaces. The top surface connects the two lateral surfaces, which show respective undercuts (on the lateral sides of the raised portions). Each of the electrodes includes a structure that includes a potentially superconducting material. Two protruding structures are accordingly formed, which are shaped complementarily to the respective undercuts. This way, the shaped structure of each of the electrodes protrudes toward the other one of the electrodes of the pair.

Buried electrode geometry for lowering surface losses in superconducting microwave circuits

A spin logic device which includes an electron confinement layer confining an electron gas in a two-dimensional area (2DEG) subtended by a direction x and a direction y, the latter perpendicular to the former. The spin logic device is configured for the 2DEG to support a persistent spin helix (PSH) formed therein with a given spin component oscillating with periodicity &#x3bb; along direction x but not oscillating along direction y. Majority logic circuit of the spin logic device includes: at least one input device energizable to create respective local spin-polarizations of the 2DEG in first regions of the confinement layer. The input device is configured to detect in a second region of the confinement layer an average spin-polarization of the 2DEG diffused through resulting PSHs, wherein a projection of a distance between the second region and first regions onto direction x is equal to n&#x3bb;/a, n integer, a equal to 2 or 4.

Spin logic based on persistent spin helices

This invention concerns the fabrication of nano to atomic scale devices, that is electronic devices fabricated down to atomic accuracy. The fabrication process uses either an SEM or a STM tip to pattern regions on a semiconductor substrate. Then, forming electrically active parts of the device at those regions. Encapsulating the formed device. Using a SEM or optical microscope to align locations for electrically conducting elements on the surface of the encapsulating semiconductor with respective active parts of the device encapsulated below the surface. Forming electrically conducting elements on the surface at the aligned locations. And, electrically connecting electrically conducting elements on the surface with aligned parts of the device encapsulated below the surface to allow electrical connectivity and tunability of the device. In further aspects the invention concerns the devices themselves.

Fabrication of atomic scale devices

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Zurich, Switzerland

Andreas Fuhrer