Ams Ag

Ams International Ag

Austriamicrosystems Ag

Andreas Fitzi

Thomas Froehlich

Thomas Troxler

Franz Schrank

Jens Hofrichter

Jochen Kraft

Gonggui Xu

Matthias Steiner

Richard Forsyth

Georg Parteder

Thomas Christen

Josef Pertl

José Manuel García González

Michael Leitner

Dominik Hollinger

Thomas Mueller

Dusan Prelog

Stephan Dobretsberger

Roger Ehrensperger

Urs Denier

A circuit arrangement for charge integration may include an input for applying a signal representing charge pulses, an output for providing an integrated signal, and an integrating circuit connected between the input and the output, comprising a resistive circuit and a capacitor and having an RC time constant which is a function of the resistive circuit and the capacitor. The circuit arrangement may include a feedback control circuit connected at its input, to the output of the circuit arrangement and providing, at its output, a control signal, where at least one of the resistive circuit and the capacitor has a variable value based on the control signal.

Circuit arrangement and method for charge integration

An optoelectronic device comprises a first semiconductor layer of a first conductivity having a front side and a backside. A second semiconductor layer of a second conductivity is arranged on the front side of the first semiconductor layer, and further comprises a first semiconductor region and a second semiconductor region forming a photodiode in the second semiconductor layer. A signal path electrically connects the photodiode to a fixed potential.

Optoelectronic device, photonic detector and method of producing an optoelectronic device

A charge sensitive amplifier circuit for sensor frontend comprises an input node to be connected to a sensor to receive an input charge, and an output node to be connected to a charge conversion circuit. The charge sensitive amplifier circuit comprises a first transfer switch located between the input node and the output node to transfer the input charge to the output node. The charge sensitive amplifier circuit further comprises a second transfer switch located in parallel to the first transfer switch between the input node and the output node to transfer the input charge to the output node.

Charge sensitive amplifier circuit for sensor frontend

An image sensor includes a multitude of photodiodes and analog-to-digital converters disposed in adjacent first and second portions of a semiconductor substrate. The photodiodes exhibit X-ray radiation tolerance. An arrangement of several image sensors in adjacent rows can be used for an X-ray detector in a computed tomography apparatus.

Image sensor, image sensor arrangement and computed tomography apparatus including the same

The assembly comprises a semiconductor device with an active-pixel array, a readout circuit chip or plurality of readout circuit chips mounted outside the active-pixel array, the readout circuit chip or plurality of readout circuit chips being configured to read out voltages or currents provided by the active-pixel array, and electric connections between the active-pixel array and the readout circuit chip or plurality of readout circuit chips.

Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation

An amplifier arrangement has a first differential stage with a first transistor pair, a second differential stage with a first and a second transistor pair, each pair having a common source connection. The amplifier arrangement further has a first complementary differential stage with a transistor pair having opposite conductivity type, and a second complementary differential stage with a first and a second transistor pair of the complementary conductivity type. The first and the second complementary differential stage are connected symmetrically compared to the first and the second differential stage. The transistors of the second differential stage and the second complementary differential stage are symmetrically connected to form respective first, second, third and fourth current paths. A pair of output terminals is coupled to the first and the fourth current path. Gate terminals of the transistors are coupled to a respective pair of input terminals.

Amplifier arrangement and switched capacitor integrator

The sensor chip stack comprises a sensor substrate of a semiconductor material including a sensor, a chip fastened to the sensor substrate, the chip including an integrated circuit, electric interconnections between the sensor substrate and the chip, electric terminals of the chip, the chip being arranged between the electric terminals and the sensor substrate, and a molding material arranged adjacent to the chip, the electric terminals of the chip being free from the molding material.

Sensor chip stack and method of producing a sensor chip stack

An amplifier circuit with a differential input and a differential output comprises a first and a second pair of matched transistors having a first threshold voltage and comprising control terminals connected to the differential input. A first and a second pair of triplets of transistors having a second threshold voltage being different from the first threshold voltage is connected to each one of the pairs of matched transistors such that respective current paths are formed with these transistors. The currents are split up to bias current sources and to an output stage such that the current is reused for implementing a class AB operation. Furthermore, a current through bias transistors connected in the current path of the first and the second pair of matched transistors is mirrored to output transistors being arranged in a differential current path of the output stage.

Amplifier circuit and amplifier arrangement

An amplifier arrangement is presented, comprising a first differential stage (DS) comprising at least two transistors (M, M') having a first threshold voltage (Vth), at least a second differential stage (DS) comprising at least two transistors (M, M&#x2032;) having a second threshold voltage different from the first threshold voltage, at least one of the transistors of the first and second differential stage (DS, DS), respectively, has a control input commonly coupled to an input of the amplifier arrangement, at least one transistor (M) of the first differential stage and one transistor (M) of the second differential stage are arranged in a common current path, which is coupled to an output of the amplifier arrangement.

Amplifier arrangement

A delta-sigma modulator () comprises a modulator loop () and a code generator (). The modulator loop () comprises a loop filter (). The code generator () is configured to generate a generator signal (BS) that is realized as an extended Barker code. The code generator () comprises a generator output () that is coupled to the loop filter ().

Delta-sigma modulator and method for signal conversion

An optical sensor arrangement () comprises a photodiode () for providing a sensor current (IPD) and an analog-to-digital converter arrangement () which is coupled to the photodiode () and determines a digital value of the sensor current (IPD) in a charge balancing operation in a first phase (A) and in another conversion operation in a second phase (B).

Optical sensor arrangement and method for light sensing

In one embodiment, a method for switching an electrical load having at least one capacitive component and one inductive component in a bridge branch of a bridge circuit comprises a charging of the bridge branch to a first voltage (V) in a forward switching phase (F), a discharging of the capacitive component of the electrical load in a first open switching phase (O), a charging of the bridge branch to a second voltage (V) in a reverse switching phase (R), with the second voltage (V) being polarized inversely from the first voltage (V), and a negative charging of the capacitive component of the electrical load in a second open switching phase (O). A bridge circuit is also provided.

Method for switching an electrical load in a bridge branch of a bridge circuit, and bridge circuit

An arrangement for charge integration comprises an input () for the provision of a charge-dependent signal and an integrator () to integrate a signal present at its input. In addition, a coupling circuit () that can adopt at least two operating states is provided to couple the input () to the integrator () which has a temperature-dependent coupling characteristic. A correction circuit () that can be operated by a clock signal is coupled to the input () in order to transfer a quantity of charge, and has a temperature characteristic that is derived from the coupling characteristic of the coupling circuit ().

System and method for charge integration

Circuitry includes an acquiring circuit to acquire period and phase information of an oscillation. The acquiring circuit includes a first input electrically coupled to a first connection and a second input electrically coupled to a second connection. The first connection and the second connection are for electrically coupling to an oscillating circuit. A control circuit includes a first input electrically coupled to an output of the acquiring circuit. The control circuit includes a second input electrically coupled to a third connection for supply of a voltage that is based on the rectified voltage. A switch includes a controlled segment for electrically coupling a fourth connection to a reference potential connection, and a control connection that is electrically coupled to an output of the control circuit to excite an oscillation in the oscillating circuit via a DC voltage.

Control arrangement and circuit arrangement for converting a DC voltage into a rectified voltage

An arrangement for charge integration comprises a charge-generating circuit () that provides a charge-dependent signal, and a coupling circuit () comprising a first and a second transistor (T, T). The first transistor (T) can be controlled in dependence on the charge-dependent signal. The second transistor (T) is configured to forward the charge-dependent signal in dependence on a control signal provided by the first transistor (T). The forwarded charge-dependent signal is integrated by an integrator ().

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Staefa, Switzerland

Andreas Fitzi