Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ledvance Gmbh

Osram Gmbh

Osram Oledgmbh

Ams-osram International Gmbh

Andreas Dobner

Krister Bergenek

Matthias Goldbach

Sebastian Wittmann

Thomas Schwarz

Stefan Groetsch

Ludwig Hofbauer

Peter Brick

Uli Hiller

Michael Wittmann

Tobias D Schmidt

Andreas Kloss

Frank Vollkommer

Michael Brandl

Andreas Waldschik

Florian Bösl

Florian Bosl

Frank Singer

Markus Heinrich Klein

Reiner Windisch

Rainer Huber

Matthias Bruckschloegl

Meik Weckbecker

Hubert Halbritter

Ralph Wirth

Jörg Erich Sorg

Matthias Sperl

Joerg Sorg

Farhang Ghasemi Afshar

Dennis Sprenger

Sebastian Stigler

Florian Boesl

Sergey Kudaev

Georg Bogner

Britta Göötz

Bernd Barchmann

Simon Schwalenberg

Gertrud Kraeuter

Holger Huebner

Bernd Boehm

Ulrich Frei

Matthias Hien

Ralph Bertram

Jasmin Muster

Christoph Koller

Robert Regensburger

Armin Wetterer

Melanie Zumkley

Stefan Rass

Hermann Nuss

Erwin Beer

Katrin Kondula

Stefan Merl

Matthias Stark

Stephan Finger

Hanna Schulz

In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

Optoelectronic device and method for producing an optoelectronic device

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Optoelectronic device

An optoelectronic lighting device includes a transparent pane, in particular a glass pane, on which a first at least partially transparent intermediate layer is arranged. The optoelectronic lighting device also includes at least one optoelectronic fiber arranged on the first intermediate layer and including at least one electrical line extending in a longitudinal direction and connected to a plurality of optoelectronic semiconductor components. The optoelectronic fiber includes a flexible support substrate on which the at least one electrical line and the plurality of optoelectronic semiconductor components are arranged. The optoelectronic lighting device further includes a second at least partially transparent intermediate layer, the second intermediate layer being arranged on the first intermediate layer and covering the at least one optoelectronic fiber.

Optoelectronic lighting device and method

An optoelectronic apparatus comprises a transparent first cover, at least two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Apparatus comprising a carrier with optoelectronic elements and method for manufacturing the apparatus

An optoelectronic component includes at least one optoelectronic semiconductor chip with a main surface on which two electrical contacts are arranged. The optoelectronic component also includes a control chip for controlling the optoelectronic semiconductor chip with a plurality of electrical connection pads. The optoelectronic component further includes a housing with a housing body. The optoelectronic semiconductor chip is arranged with a mounting surface, which extends transversely to the main surface, in a first recess of the housing body. A side surface of the first recess forms an obtuse tilt angle with a bottom surface of the first recess. At least one of the electrical contacts of the optoelectronic semiconductor chip is electrically conductively connected to an electrical connection pad of the control chip via a conductor path. The conductor path is arranged at least in places on the side surface of the first recess.

Optoelectronic component and method for producing the same

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Window or surface of a vehicle comprising at least one optoelectronic component

In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Method for singulating components from a component composite, and component

An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Optoelectronic light emitting device and manufacturing method

A light-emitting window element includes a transparent first carrier layer, a transparent second carrier layer, a substrate with a plurality of light-emitting semiconductor chips arranged thereon, and an optical layer having an adjustable transparency. The substrate with the plurality of light-emitting semiconductor chips and the optical layer are arranged between the first and second carrier layers, and the first and second carrier layers, the substrate with the plurality of light-emitting semiconductor chips and the optical layer form a laminate composite.

Light-emitting window element and motor vehicle comprising a light-emitting window element

An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

A placement device for placing optoelectronic components on electrical lines includes a holding device for holding at least one electric line extending in a longitudinal direction, and an application device for arranging optoelectronic components on the at least one electrical line.

Optoelectronic fiber, placement device, extrusion apparatus, and apparatus and method for producing an optoelectronic fiber

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

Irradiation unit comprising a pump radiation source and a conversion element

An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Optoelectronic semiconductor chip, method of manufacturing an optoelectronic component and optoelectronic component

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Wenzenbach, Germany

Andreas Dobner