Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Andreas Breidenassel

Alfred Lell

Christoph Eichler

Thomas Schwarz

Bernhard Stojetz

Adrian Stefan Avramescu

Soenke Tautz

Jan Oliver Drumm

Sergey Khrushchev

Karsten Auen

Markus Horn

Sönke Tautz

A lighting device provides a pump light unit for emitting pump light, a phosphor element for generating conversion light in response to excitation by the pump light, and a wavelength-dependent beam splitter which is reflective to the pump light and transmissive to the conversion light. The first pump light portion is incident on a light incidence surface of the beam splitter and is reflected from the beam splitter to the phosphor element. The element emits the conversion light in response to the excitation by the pump light. The conversion light is likewise incident on the light incidence surface, but transmitted by the beam splitter and exiting at a light exit surface of the beam splitter opposite the light incidence surface. Concurrently, the second pump light portion, reflected from the beam splitter, is directed onto the light exit surface of the beam splitter and is superposed with the conversion light.

Lighting device having a pumping light unit and luminescent element

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

Laser component and method of producing it

A method for producing a radiation arrangement includes providing a first substrate, arranging a first radiation source or generating first electromagnetic radiation thereon, arranging a first deflection element on the first substrate in a beam path of the first electromagnetic radiation such that the first electromagnetic radiation is deflected in a direction away from the first substrate, providing a second substrate, forming a first coupling-out region in the second substrate at a predefined position, determining an actual position of the first coupling-out region, detecting the deflected first electromagnetic radiation as a result of which a beam path of the deflected first electromagnetic radiation can be determined, aligning the first radiation source and the first deflection element on the first substrate depending on the determined actual position of the first coupling-out region.

Light emitter and method for manufacturing the same

A semiconductor laser light source comprising an edge-emitting semiconductor body () is provided. The semiconductor body () contains a semiconductor layer stack () having an n-type layer (), an active layer () and a p-type layer () which is formed for generating electromagnetic radiation which comprises a coherent portion (). The semiconductor laser light source is formed for decoupling the coherent portion () of the electromagnetic radiation from a decoupling surface () of the semiconductor body () which is inclined with respect to the active layer (). The semiconductor body () comprises a further external surface (A,B,C) which is inclined with respect to the decoupling surface () and has at least one light-diffusing sub-region (,A,B,C,A,B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack () in the direction towards the further external surface (A,B,C).

Semiconductor laser light source having an edge-emitting semiconductor body

A semiconductor laser light source comprising an edge-emitting semiconductor body () is provided. The semiconductor body () contains a semiconductor layer stack () having an n-type layer (), an active layer () and a p-type layer () which is formed for generating electromagnetic radiation which comprises a coherent portion (). The semiconductor laser light source is formed for decoupling the coherent portion () of the electromagnetic radiation from a decoupling surface () of the semiconductor body () which is inclined with respect to the active layer (). The semiconductor body () comprises a further external surface (A,B,C) which is inclined with respect to the decoupling surface () and has at least one light-diffusing sub-region (A,B,C,A,B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack () in the direction towards the further external surface (A,B,C).

A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.

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Bad Abbach, Germany

Andreas Breidenassel