Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Andreas Biebersdorf

Petrus Sundgren

Christoph Klemp

Ines Pietzonka

Stefan Illek

Krister Bergenek

Felix Feix

Ana Kanevce

Christian Berger

Ralph Wirth

Siegfried Herrmann

Erwin Lang

Tobias Meyer

Marc Philippens

Julia Stolz

Frank Singer

Berthold Hahn

Alexander F Pfeuffer

Korbinian Perzlmaier

Martin Rudolf Behringer

Reiner Windisch

Tansen Varghese

Sebastian Wittmann

Jens Ebbecke

Laura Kreiner

Peter Stauss

Bruno Jentzsch

Jens Mueller

Kerstin Neveling

Christian Mueller

Philipp Kreuter

Ruth Boss

Thomas Schwarz

Frank Jermann

Christian Leirer

Stefan Lange

Joerg Sorg

Rainer Butendeich

Gertrud Kraeuter

Christian Rumbolz

Florian Boesl

Anton Vogl

Hubert Halbritter

Peter Brick

Georg Bogner

Matthias Sabathil

Karl Engl

Jörg Erich Sorg

Joachim Hertkorn

Karsten Diekmann

Matthias Peter

Lutz Hoeppel

Martin Strassburg

Hans-Jürgen Lugauer

Bernd Barchmann

Jürgen Off

Axel Kaltenbacher

Simon Schwalenberg

Tetsuya Taki

Michael Brandl

Dirk Becker

Harald Jaeger

Christine Rafael

Vincent Grolier

Jean-Jacques Drolet

Vera Stöppelkamp

Andreas Leber

Andreas Waldschik

Xue Wang

Björn Hoxhold

Nicole Heitzer

Christine Maier

Philipp Schlosser

Eva-Maria Rummel

Marie Assmann

Ansgar Laubsch

Andreas Rausch

Korbinian Perlzmaier

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.

Method of laser treatment of a semiconductor wafer comprising AlGaInP-LEDs to increase their light generating efficiency

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

Method for manufacturing a semiconductor device and optoelectronic device

The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface.

Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

A method of aligning semiconductor chips in a medium includes providing an electrically insulating liquid medium; providing semiconductor chips; forming a suspension with the medium and the semiconductor chips; exposing the semiconductor chips to electromagnetic radiation that generates free charge carriers in the semiconductor chips; arranging the suspension in an electric field in which the semiconductor chips are aligned along the electric field; and curing the medium after aligning the semiconductor chips.

Method of aligning semiconductor chips, method of arranging semiconductor chips, device that produces a semiconductor component, and semiconductor component

Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Light-emitting diode including a plurality of luminescent regions

An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.

Optoelectronic semiconductor component

Growing community of inventors

Wuppertal, Germany

Andreas Biebersdorf