Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Sony Corporation

Fhr Anlagenbau Gmbh

Memsfab Gmbh

Technische Universitat Chemnitz

Andreas Bertz

Thomas Gessner

Koichi Ikeda

Akira Akiba

Christian Kaufmann

Joerg Froemel

Steffen Kurth

Thomas Werner

Wolfgang Hentsch

Reinhard Fendler

Lutz Koehler

Reinhard Schubert

Lutz Köhler

Stefan Leidich

Markus Nowack

Matthias Küchler

Roman Knöfler

Steffen Heinz

Stefan E Schulz

Jörg Frömel

A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90&#xb0; C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.

Method and apparatus for structuring components made of a material composed of silicon oxide

An electrostatically actuated micro-mechanical switching device with movable elements formed in the bulk of a substrate for closing and releasing at least one Ohmic contact by a horizontal movement of the movable elements in a plane of the substrate. The switching device has a drive with comb-shaped electrodes including fixed driving electrodes and movable electrodes. A movable push rod is mechanically connected with the movable electrodes, extends through the electrodes, has a movable contact element at one side, and at least one restoring spring. A signal line has two parts interrupted by a gap. The micro-mechanical switching device is in shunt-configuration with low loss, high isolation in a wide frequency range, low switching time at low actuation voltage and sufficient reliability. The line impedance of the signal line and its variation is as small as possible. The switching device is in shunt-configuration for closing and releasing the Ohmic contact between a ground line and the signal line. The contact element has a movable contact beam extending at least partially opposite to the signal line and being electrically and mechanically connected to both parts of the signal line, respectively. The ground line is formed with a contact bar that leads through the gap of the signal line for forming the Ohmic contact between the contact beam and the ground line. A contact metallization is provided at least on top and on the side walls of the contact beam, of the signal line and of the ground line.

Electrostatically actuated micro-mechanical switching device

The invention relates to a microstructure in a preferably electrically conductive substrate (), more specifically made of doped single crystal silicon, with at least one functional unit () and to a method of fabricating the same. In accordance with the invention, the functional unit () is mechanically and electrically separated from the substrate () on all sides by means of isolation gaps () and is connected, on at least one site, to a first structure () of an electrically conductive layer (S) that is electrically isolated from the substrate () by way of an isolation layer () and that secures the unit into position relative to the substrate (). For this purpose, the functional unit () is released from the substrate () in such a manner that the isolation gaps () are provided on all sides relative to the substrate (). The electrically conductive layer (S) is applied in such a manner that it is connected through contact fingers () for example to the functional unit () which it secures into position. The method in accordance with the invention permits to substantially facilitate the manufacturing process and to produce a microstructure with but small parasitic capacitances.

Microstructure and method for the production thereof

What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.

Vertical transistor comprising a mobile gate and a method for the production thereof

Growing community of inventors

Chemnitz, Germany

Andreas Bertz