Nxp B.v.

Andreas Bernardus Maria Jansman

Frederik Willem Maurits Vanhelmont

Jaap Ruigrok

Johannes Josephus Theodorus Marinus Donkers

Jan Sonsky

Casper Van Der Avoort

Robert Hendrikus Margaretha Van Veldhoven

Robertus Adrianus Maria Wolters

Tim Boettcher

Markus Mueller

Jeroen Antoon Croon

Andreas Lentz

Stephan Heil

Stephen John Sque

Franciscus Petrus Widdershoven

Kim Phan Le

Hans-Peter Loebl

Robert Frederick Milsom

Viet Thanh Dinh

Godefridus Adrianus Maria Hurkx

Robert James Pascoe Lander

Mark Isler

Johannes Van Wingerden

Fredericus Christiaan Van Den Heuvel

Rensinus Cornelis Strijbos

Godefridus Andrianus Maria Hurkx

A voltage glitch detector includes a ring oscillator, a plurality of counters, a combined result circuit, and a result evaluation circuit. The ring oscillator includes a plurality of series-connected stages. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. Each counter of the plurality of counters has an input coupled to a node located between two stages of the plurality of series-connected stages. The combined result circuit is coupled to each of the plurality of counters. The combined result circuit combines the count values received from each counter of the plurality of counters to provide a combined result. The result evaluation circuit is coupled to compare the combined result with a reference value to determine when a voltage glitch is detected.

Voltage glitch detection circuit

An integrated circuit for hardware security comprises a voltage glitch detection processing system comprising an oscillator circuit that generates and outputs a local oscillator clock which is a function of a supply voltage; a counter clocked by the oscillator circuit to generate at least one count value; and a capture section that synchronizes the at least one count value into a system clock domain for detecting a voltage glitch in the supply voltage.

Voltage glitch detection in integrated circuit

Embodiments of devices and method for detecting semiconductor substrate thickness are disclosed. In an embodiment, an IC device includes a semiconductor substrate, a charge emitter embedded in the semiconductor substrate and configured to produce an electrical charge in the semiconductor substrate and a charge sensor embedded in the semiconductor substrate and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate. The magnitude of the response signal depends on the thickness of the semiconductor substrate.

Device and method for detecting semiconductor substrate thickness

Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Heterojunction semiconductor device and manufacturing method

A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body.

Resonator

Heterojunction semiconductor device with conductive barrier portion and manufacturing method

A resonator comprising a resonator body and actuation electrodes for driving the resonator into a resonant mode, in which the resonator body vibrates parallel to a first axis. The resonator comprises means to apply a voltage to the resonator in a direction perpendicular to the first axis direction. This serves to shift the frequency of resonant modes other than the principal resonant mode, and this allows increased amplitude of output signal from the resonator.

Resonator and method of controlling the same

A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Magnetoresistive sensor

An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined.

Magnetic field sensor

An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.

Method of manufacturing a bulk acoustic wave device

A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode, with at least partial overlaps with all of the electrodes of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode and the second electrode in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode and the second electrode in the second pair are mutually opposite.

Device with an electroacoustic balun

A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer () having first and second surfaces on opposing sides, a first electrode () extending over the first surface, and a second electrode () extending over the second surface, the extent of the area of overlap (R) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material () in the same layer as the first electrode () and surrounding that electrode. The material constituting the dielectric material () has a different mass, typically between 5% and 15%, from the material comprising the first electrode () it surrounds. The mass of the dielectric material () can be lower or higher than the mass of the first electrode (). Planarisation of the dielectric material () enhances the performance of the device.

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Nuenen, Netherlands

Andreas Bernardus Maria Jansman