Rec Solar Pte. Ltd.

Universitetet I Oslo

Instititt for Energiteknikk

Andreas Bentzen

Richard Hamilton Sewell

Erik Sauar

Alan Francis Lyon

Martin Nese

Paul Alan Basore

Young Seen Lee

Lawrence Schloss

Alexander Ulyashin

Arve Holt

Hiroaki Hayashigatani

Toshio Itoh

Roger Thompson

Nemia Grubisich

Bengt Svensson

This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells.

Method for production of wafer based solar panels

The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Back junction back contact solar cell module and method of manufacturing the same

The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.

Surface passivation of silicon based wafers

Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module

The present invention relates to cost effective methods for metallization and or metallization and interconnection of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Method for metallization or metallization and interconnection of back contact solar cells

Growing community of inventors

Oslo, Norway

Andreas Bentzen