Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

University of Virginia Patent Foundation

U2t Photonics Ag

Andreas Beling

Heinz-Gunter Bach

Alexander Jacob

Bassem Tossoun

Günter Unterbörsch

A monolithic waveguide-integrated photodiode having a first electroconductive contact layer, a depleted waveguide core layer, an absorption layer, and a second electroconductive contact layer, the refractive index of the first electroconductive contact layer being less than the depleted waveguide core layer, the refractive index of the waveguide core layer being less than the absorption layer, and the refractive index of the second electroconductive contact layer being less than the absorption layer. The waveguide core layer is arranged between the first electroconductive contact layer and the absorption layer and also acts as a depleted carrier drift layer. This arrangement results in greater quantum efficiency and shorter photodiode lengths for a given bandwidth.

Integrated photodiode with unique waveguide drift layer

The invention relates to an optical module) comprising a guiding element () adapted to guide optical radiation (P); a converting element () adapted to convert received electrical energy into optical radiation or to convert received optical radiation into electrical energy; a mirror () arranged in the beam path () between the optical guiding element and the converting element and configured to optically connect the guiding element and the converting element; and a carrier () having a first surface section () for carrying the mirror and a second surface () section for carrying the converting element. The carrier is made of polymer material.

Optical module

The invention relates to a photodiode chip which has a great limit frequency and a junction from the active photodiode area of a photodiode mesa to the output pad of the high-frequency output of the photodiode chip. The aim of the invention is to further increase the bandwidth factor of photodiode chips. Said aim is achieved by establishing the connection from the photodiode mesa to the output pad by means of a high-resistance wire with impedance (Z) which is spread across the length thereof and is at least as high as the load impedance (Z) effective at the output pad.

Photodiode chip having a high limit frequency

A waveguide-integrated photodiode for high bandwidths with a semi-insulating monomode supply waveguide monolithically integrated on a substrate, together with an overlying photodiode mesa structure having an electroconducting n-contact layer, an absorption layer, a p+-contact layer and a metallic p-contact, the refraction index of the n-contact layer being greater than the refraction index of the semi-insulating waveguide layer. Lengthening the n-contact layer by a predetermined length L in the direction of the supply waveguide in relation to the overlying layers correspondingly increases at least one factor of the product of quantum efficiency and bandwidth.

Growing community of inventors

Charlottesville, VA, United States of America

Andreas Beling