Infineon Technologies Ag

Andreas Bauer

Franco Mariani

Thomas Fischer

Gunther Mackh

Reinhard Pufall

Gerhard Leschik

Reinhard Hess

Maria Heidenblut

Sergey Ananiev

Michael Goroll

Stefan Kaiser

Kabula Mutamba

Georg Reuther

Christoph Kamseder

A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.

Semiconductor chip having a crack stop structure

A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.

Separation of workpiece with three material removal stages

A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

Semiconductor device and method for manufacturing a semiconductor device

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Wuppertal, Germany

Andreas Bauer