Infineon Technologies Ag

Andreas Allmeier

Jochen Dangelmaier

Kim Huat Hoa

Dietmar Lang

Jens G Pohl

Klaus Elian

Ludwig Heitzer

Cyrus Ghahremani

Derek Debie

Hazrul Alang Abd Hamid

Thorsten Meyer

Christian Geissler

David Tumpold

Matthias Eberl

Fabian Merbeler

Christian Irrgang

Thomas Müller

Hazrul Aland Abd Hamid

The application relates to a semiconductor device for particle measurement having a cavity housing and a MEMS chip arranged inside the cavity housing. The housing includes a first opening, via which the cavity is connected to the surroundings and in which a first grating is arranged, which is capable by setting it to a first electrical potential of attracting particles from the surroundings and/or electrically charging them. The MEMS chip includes a membrane facing toward the first opening, which is capable by setting it to a second electrical potential of attracting particles. The application furthermore relates to a method for operating a semiconductor device having a cavity housing and a MEMS chip arranged inside the cavity housing.

Semiconductor device for particle measurement and method for operating the semiconductor device

A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.

Radiation source device

A semiconductor device includes a die paddle, a plurality of electrically conductive leads extending away from the die paddle, and an adhesion promoter plating material selectively formed on the electrically conductive leads such that outer portions of the leads are covered by the adhesion promoter plating material, and interior portions of the leads that are disposed between the die paddle and the respective outer portions of each lead are substantially devoid of the adhesion promoter plating material.

Direct selective adhesion promotor plating

A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames have a die paddle and a plurality of leads extending away from the die paddle. A first one of the unit lead frames is plated with an adhesion promoter plating material within a package outline area of the first unit lead frame. The package outline area includes one of the die paddles and interior portions of the leads. Wire bond sites are processed in the first unit lead frame before or after the plating of the first lead frame such that, after the plating of the first lead frame. The wire bond sites are substantially devoid of the adhesion promoter plating material. The wire bond sites are disposed within the package outline area at an end of the interior portions of the leads that is closest to the die paddle.

A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames includes a die paddle, a plurality of leads extending away from the die paddle, and a peripheral ring delineating interior portions of the leads from exterior portions of the leads. An adhesion promoter plating material is selectively plated within a package outline area of a first unit lead frame. The die paddle and the interior portions of the leads are disposed within the package outline area and the exterior portions of the leads are disposed outside of the package outline area. Wire bond sides are processed such that, after selectively plating the adhesion promoter plating material, the wire bond sites are substantially devoid of the adhesion promoter plating material. The wire bond sites are disposed within the package outline area and are spaced apart from the peripheral ring.

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Pfatter, Germany

Andreas Allmeier