Carl Zeiss Microscopy Gmbh

Carl Zeiss Multisem Gmbh

Andreas Adolf

Dirk Zeidler

Josef Biberger

Ralph Pulwey

Stefan Schubert

Christof Riedesel

Rainer Arnold

Nico Kaemmer

Harald Niebel

Volker Wieczorek

Klaus Hegele

Michael Behnke

Ernst Draszba

Ingo Müller

Nicolas Kaufmann

Ulrich Bihr

A multi-beam charged particle microscope and a method of operating a multi-beam charged particle microscope for wafer inspection with high throughput and with high resolution and high reliability are provided. The method of operation and the multi-beam charged particle beam microscope comprises a mechanism for a synchronized scanning operation and image acquisition by a plurality of charged particle beamlets according a selected scan program, wherein the selected scan program can be selected according an inspection task from different scan programs.

Multi-beam digital scan and image acquisition

An ion beam system comprises a voltage supply systemand at least one beam deflectorhaving at least one first deflection electrodeand plural second deflection electrodes, wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

Ion beam system and method of operating an ion beam system

An ion beam system comprises a voltage supply systemand at least one beam deflectorhaving a plurality of first defection electrodesand a plurality of second deflection electrodeswherein the voltage supply system is configured to supply different adjustable deflection voltages to the plurality of second deflection electrodes such that electric deflection fields between the plurality of second deflection electrodes and the plurality of opposite first deflection electrodes have a common orientation. The ion beam system has a high kinetic energy mode in which a distribution of the electric deflection fields has a greater width, and a low kinetic energy mode in which a distribution of the electric deflection fields has a smaller width.

Ion beam system and method of operating ion beam system

A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.

Method for producing a representation of an object by means of a particle beam, as well as a particle beam device for carrying out the method

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Aalen, Germany

Andreas Adolf