Morton Thiokol Inc.

Cvd, Incorporated

Other

Thiokol Corporation

Andreas A Melas

Benjamin C Hui

Jorg Lorberth

Ben C Hui

Ravi K Kanjolia

John W O'Grady, Jr

Norbert Braunagel

Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cmthe top approximately 0.5 microns are converted to a single crystal with reduced defect density.

Method to reduce crystal defects particularly in group III-nitride layers and substrates

Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

MOCVD of indium oxide and indium/tin oxide films on substrates

A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.

Use of phosphine and arsine compounds in chemical vapor deposition and

A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:

Method for vapor phase deposition of gallium nitride film

Niobium (V) and tantalum (V) halides are converted to Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 that are free of detectable levels of halide in a two step process. In the first step, the metal halide is reacted with an alcohol and with a replacement species, such as ammonia, which reacts with the halide. This produces a metal alkoxide which is soluble and a halide salt of the replacement species which is insoluble in the alcohol and precipitates. After physically separating the alkoxide in alcohol solution from the precipitate, in a second step, the metal alkoxide is hydrolyzed with purified water to produce the oxide.

Method of producing halide-free metal and hydroxides

Gallium hydride/trialkylamine adducts, and their use in deposition of

Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; and

Hydrocarbon-substituted analogs of phosphine and arsine, particularly

Hybrid organometallic compounds, particularly for metal organic chemical

An all welded square bottomed stainless steel cylinder and dip tube device for transferring by vapor deposition very reactive electronic grade organometallic liquid to a deposition system includes a top fill opening and inlet and outlet diaphragm valves, and is coated on the interior with PVF Teflon to several thousandths of an inch thickness. Contamination of the liquid is eliminated or at least substantially minimized since the device is stable in an upright position, the diaphragm valves each have a very small and inert area exposed to the liquid, and the coating serves as a barrier to contamination of the liquid by the metal of which the cylinder and dip tube are made.

Growing community of inventors

Burlington, MA, United States of America

Andreas A Melas