Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Andrea Tomasi

Christophe Ballif

Matthieu Despeisse

Bertrand Paviet-Salomon

A photovoltaic device is proposed comprising a silicon-based substrate () having a p-type or n-type doping, with an intrinsic buffer layer () situated on said substrate. A first silicon layer () of a first doping type is situated on predetermined regions () of the intrinsic buffer layer. The first layer has interstices () between said predetermined regions (). The first silicon layer comprises at least partially a microcrystalline layer at its side away from the substrate. A microcrystalline silicon layer () of a second doping type is situated on said first silicon layer (). A third silicon layer () of the second doping type is situated on said intrinsic buffer layer at the interstices, the third silicon layer being amorphous at its side facing said silicon-based substrate and comprising an at least partially microcrystalline layer portion to the side away from the intrinsic buffer layer.

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Neuchâtel, Switzerland

Andrea Tomasi