Stmicroelectronics S.r.l.

Consiglio Nazionale Delle Ricerche

Andrea Severino

Ferdinando Iucolano

Alfio Russo

Alfonso Patti

Maria Concetta Nicotra

Anna Bassi

Francesco La Via

Giovanni Franco

Stefania Rinaldi

Angelo Annibale Mazzeo

Nicolò Piluso

A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure formed by semiconductor materials that include elements of Groups III-V of the Periodic Table, and a dielectric layer on the semiconductor body; etching selective portions of the wafer, thus exposing a portion of the heterojunction structure; forming an interface layer by a surface reconstruction process, of a semiconductor compound formed by elements of Groups III-V of the Periodic Table, in the exposed portion of the heterojunction structure; and forming a gate electrode, including a gate dielectric and a gate conductive region, on said interface layer.

HEMT transistors with improved electron mobility

Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility

Growing community of inventors

Aci Sant'Antonio, Italy

Andrea Severino