Novaled Ag

Novaled Gmbh

Other

Andrea Lux

Horst Hartmann

Olaf Zeika

Steffen Willmann

Josef Salbeck

Ansgar Werner

Michael Limmert

Manfred Kussler

Andre Gruessing

Carsten Rothe

Martin Pfeiffer

Omrane Fadhel

Sascha Dorok

Jan Blochwitz-Nimoth

Ulrich Heggemann

Kentaro Harada

Sven Murano

Martin Ammann

Ina Steudtner

Ina Faltin

Olaf Kühl

Simon Gessler

Andre Grüssing

Prof Dr Horst Hartmann

André Grüssing

André Grüßing

Andre c/o Novaled Gmbh Grüssing

Josef Saalbeck

The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

Oxocarbon-, pseudooxocarbon- and radialene compounds and their use

The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.

Quinoid compounds and their use in semiconducting matrix materials, electronic and optoelectronic structural elements

The present invention relates to a method for preparing doped organic semiconductor materials as well as a formulation which may be utilized in that method. The doped organic semiconductor materials are prepared by preparing a solution or suspension containing at least one dopant precursor, at least one organic material to be doped, and a solvent. The solution or suspension is then applied onto a substrate. After removing the solvent, the dopant precursor is converted into a dopant by application of activation energy. The dopant precursor, which is a dimer, oligomer, polymer, dispiro compound, or polycycle, is cleaved by the application of activation energy.

Method for preparing doped organic semiconductor materials and formulation utilized therein

Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c: 

Use of a precursor of an N-dopant for doping an organic semiconductive material, precursor and electronic or optoelectronic component

The present invention relates new compounds and to an organic electronic device comprising at least one substantially organic layer comprising a non fully conjugated chemical compound, which compound is preferably used in electron transport layers, electron injection layers. The invention also includes a process for preparing an organic electronic device, wherein the substantially organic layer comprising a non fully conjugated chemical compound is deposited on a first layer, and a second layer is deposited on the substantially organic layer, preferably a cathode being deposited on the substantially organic layer comprising the non fully conjugated chemical compound.

Chemical compound for organic electronic device and organic electronic device

The present invention relates to organic electronic devices that include an organic semiconducting material. The organic electronic devices may include organic light-emitting diodes, field-effect transistors, sensors, photodetectors, organic solar cells, organic thin-film transistors, organic integrated circuits, organic field-quench devices, organic light-emitting transistors, light-emitting electrochemical cells, or organic laser diodes.

Organic electronic device comprising an organic semiconducting material

The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae. 

Use of heterocyclic radicals for doping organic semiconductors

The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, a method for the production thereof and doped organic semiconductor material containing these

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a &#x3c0; complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same

Growing community of inventors

Dresden, Germany

Andrea Lux