Asm IP Holding B.v.

Carl Zeiss Smt Gmbh

Andrea Illiberi

Shaoren Deng

Eva E Tois

Marko J Tuominen

Michael Givens

Suvi P Haukka

Ivo Johannes Raaijmakers

Delphine Longrie

Charles Dezelah

Jan Willem Maes

Michael Eugene Givens

Varun Sharma

Giuseppe Alessio Verni

Daniele Chiappe

VamsI Paruchuri

Jan Willem Hub Maes

Viljami J Pore

Raija H Matero

Hidemi Suemori

Elina Färm

Viraj Madhiwala

Chiyu Zhu

Dirk Heinrich Ehm

Moritz Becker

Oreste Madia

Edwin Te Sligte

YongGyu Han

Shinya Iwashita

Tatiana Ivanova

Anirudhan Chandrasekaran

Vincent Vandalon

Fred Roozeboom

Yves Lodewijk Maria Creijghton

Alessandra Leonhardt

Leo Lukose

Vivek Koladi Mootheri

Bart Vermeulen

Aditya Chauhan

Monica Thukkaram

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Selective passivation and selective deposition

Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.

Method of forming a layer comprising magnesium, aluminum, and zinc, and related solids and systems

A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

Methods of forming copper iodide layer and structures including copper iodide layer

Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

Selective deposition of material comprising silicon and oxygen using plasma

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

Method of cleaning a surface

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.

Toposelective vapor deposition using an inhibitor

Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.

Selective deposition of metal oxides on metal surfaces

Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

Selective deposition of silicon oxide on dielectric surfaces relative to metal surfaces

Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH, NO, NOand HO.

Atomic layer deposition of indium gallium zinc oxide

Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

Selective deposition of silicon oxide on metal surfaces

A method for at least partially removing a contamination layer () from an optical surface () of an optical element () that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer () from the optical surface (), which, in turn, includes: exposing the contamination layer () to a surface-modifying reactant () in a surface modification step, and exposing the contamination layer () to a material-detaching reactant () in a material detachment step. The optical element () is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface () of the optical element () is exposed to EUV radiation (), during which the contamination layer () is formed.

Method for removing a contamination layer by an atomic layer etching process

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Leuven, Belgium

Andrea Illiberi