Infineon Technologies Ag

Andre Uhlemann

Alexander Herbrandt

Olaf Hohlfeld

Andreas Grassmann

Tomas Manuel Reiter

Andreas Lenniger

Mark Nils Muenzer

Ivan Nikitin

Dirk Ahlers

Wolfram Hable

Christoph Koch

Ottmar Geitner

Markus Thoben

Frank Winter

Michael Schlueter

Alexander Schwarz

Lothar Koenig

Frank Broermann

Thorsten Fath

Michael SCHLÜTER

An external contact element for a power semiconductor module includes a bonded blank strip, the bonded blank strip being formed such that the external contact element includes: a first contact portion configured to be coupled to the power semiconductor module by a first solder joint, a second contact portion spaced from the first contact portion in a thickness direction out of the plane of the first contact portion, the second contact portion being configured to be coupled to an external appliance, and a spring portion connecting the first and second contact portions to each other and configured to compensate a movement along the thickness direction. The bonded blank strip includes a first sheet of a first metal or first metal alloy and a second sheet of a different second metal or second metal alloy. The second sheet is omitted from at least a substantial part of the first contact portion.

External contact element for a power semiconductor module and power semiconductor module

A circuit board includes: an electrically insulating part and an electrically conductive part; at least one semiconductor chip embedded into the electrically insulating part in a part of the circuit board; and a cooling area above and below the at least one semiconductor chip. The electrically conductive part includes a first outer conductive layer on the first surface, a second outer conductive layer on the second surface, and a first inner conductive layer which is electrically connected to the semiconductor chip. The first inner conductive layer is electrically insulated from the first outer conductive layer and from the second outer conductive layer by the electrically insulating part in the cooling area, or is electrically connected to the first outer conductive layer outside the cooling area.

Circuit board having a cooling area above and below a semiconductor chip

A snubber circuit includes a snubber substrate including an electrically insulating carrier and an electrically conducting structured layer applied thereon, the electrically conducting structured layer including two segments. The snubber circuit further includes two electrically resistive layers, each resistive layer being applied onto the two segments of the electrically conducting structured layer of the snubber substrate, and a capacitor disposed on the electrically resistive layers and having two terminals, each terminal being electrically connected to one of the electrically resistive layers. Further, a power semiconductor module having such a snubber circuit is disclosed.

Snubber circuit and power semiconductor module with snubber circuit

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

Power semiconductor module and method for producing a power semiconductor module

A circuit board includes an electrically insulating part and an electrically conductive part. At least one semiconductor chip is embedded into the electrically insulating part in a part of the circuit board. Through openings in the part of the circuit board provide for passage of a cooling liquid. The through openings extend from a first surface of the circuit board to a second surface of the circuit board. The electrically conductive part includes a first outer conductive layer on the first surface and a second outer conductive layer on the second surface. The electrically conductive part also includes a first inner conductive layer which is electrically connected to the semiconductor chip. The first inner conductive layer is electrically insulated from the first outer conductive layer and from the second outer conductive layer by the electrically insulating part in the part of the circuit board.

Circuit board, chip cooling housing, assembly and method for cooling a semiconductor chip

A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.

Directly cooled substrates for semiconductor modules and corresponding manufacturing methods

A power semiconductor module includes a substrate and a two-part cooling system arranged under the substrate. The cooling system has upper and lower pieces. The upper piece forms a flow channel with the substrate for a cooling liquid. The upper piece has a first inflow and an outflow, through which the cooling liquid can be introduced into the flow channel and removed. The upper piece also has at least one second inflow, which is spaced apart from the first inflow in a longitudinal direction. The lower piece has an inlet and an outlet, the outlet being connected to the outflow and the inlet being connected to the first inflow. The lower piece also has a channel branching off from the inlet, which includes at least one bypass channel, which is connected to the second inflow, so part of the cooling liquid passes through the bypass channel into the flow channel.

Power semiconductor module with liquid cooling

According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive sheet and an electric insulator sheet which is directly attached to the electrically conductive sheet and which is thermally coupled to the semiconductor chip, and an array of cooling structures directly attached to the electrically conductive sheet and configured for removing heat from the semiconductor chip when interacting with cooling fluid.

Power module with cooling structure on bonding substrate for cooling an attached semiconductor chip

A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1.

Semiconductor device including cladded base plate

A power module includes a substrate having an electrically insulative member with opposing first and second metallized sides and one or more semiconductor die attached to the first metallized side of the substrate. A plurality of thermally conductive structures are laterally spaced apart from one another and individually attached directly to the second metallized side of the substrate so that the plurality of thermally conductive structures extend outward from the second metallized side.

Power module with directly attached thermally conductive structures

A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

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Dortmund, Germany

Andre Uhlemann