U.S. Philips Corporation

Andre Stolmeijer

Paulus A Van Der Plas

Reinier De Werdt

Hubertus J Den Blanken

Harald Godon

Alexander G Jonkers

Paulus M Van Attekum

Christopher A Seams

A method of manufacturing a semiconductor device is set forth, comprising a silicon body (1) having a surface (4) where there are situated a number of semiconductor regions (5, 6) and field oxide regions (7). The semiconductor regions is formed, after the field oxide regions have been provided, by implantations of n-type and p-type dopants. In accordance with the invention the implantations with the n-type dopant (10, 11, 14), which are performed using an implantation mask (8) provided on the surface and comprising openings (9) at the area of a part of the semiconductor regions (5) to be formed, are combined with the implantations with the p-type dopant (12, 13, 15) which are carried out without using the implantation mask. Thus, the semiconductor regions (5, 6) are realised by means of a single implantation mask (8).

Method of manufacturing a semiconductor device comprising a silicon body

Disclosed is a method of contacting a metal silicide pattern on an integrated semiconductor circuit which is provided with a planarized dielectric layer. A silicide-forming metal layer (9), preferably a titanium layer, is provided on the surface of a silicon substrate having a field oxide patter (2) which is provided with a conductor pattern (4) of silicon. A layer (10) of amorphous (a-) silicon is provided locally on this metal layer to form 'straps'. The entire device is heated in a nitrogen-containing atmosphere, by which the metal layer (9) is converted at least partly into metal silicide (12). A dielectric layer (13), for example of silicon oxide, is provided over the entire surface. The layer (13) is planarized and provided with contact windows (15) on the metal silicide by etching, after which a metallization (16) is provided. According to the invention, the amorphous silicon layer is provided not only at the locations of the 'straps', but also under at least those contact windows which are situated above the silicon pattern (4), and preferably below all contact windows, so that a thicker silicide layer (12B) is realized below these windows and partial or substantial removal by etching of the metal silicide in the 'shallow' contact windows is prevented.

Method of contacting silicide tracks

Growing community of inventors

Eindhoven, Netherlands

Andre Stolmeijer