Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

André Somers

Alfred Lell

Christoph Eichler

Bernhard Stojetz

Andreas Löffler

Andreas Loeffler

Sven Gerhard

Harald König

Harald Koenig

Clemens Vierheilig

Jan Marfeld

John Brückner

Urs Heine

Lars Nähle

Muhammad Ali

Disclosed is an optoelectronic component comprising: Also disclosed is a method for producing an optoelectronic component.

Optoelectronic component and method for producing an optoelectronic component

In an embodiment, the semiconductor laser () comprises a semiconductor layer sequence () in which an active zone () for generating laser radiation (L) is located. Several electrical contact surfaces () serve for external electrical contacting of the semiconductor layer sequence (). Several parallel ridge waveguides () are formed from the semiconductor layer sequence () and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench () between adjacent ridge waveguides. At least one electrical feed () serves from at least one of the electrical contact surfaces () to guide the current to at least one of the ridge waveguides (). A distance (A) between the ridge waveguides is at most 50 μm. The ridge waveguides () are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Semiconductor laser and projector

A method for singulating semiconductor components () is specified, said method comprising the steps of providing a carrier (), applying at least two semiconductor chips () on the carrier (), etching at least one break nucleus () at a side of the carrier () facing the semiconductor chips (), and singulating at least two semiconductor components () by breaking the carrier () along the at least one break nucleus (). The at least one break nucleus () extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (), and the at least one break nucleus () is arranged between the two semiconductor chips () in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (). Further, each of the semiconductor components () comprises at least one of the semiconductor chips (), and the expansion of the at least one break nucleus () in the vertical direction (z) is at least% of the expansion of the carrier () in the vertical direction (z). Furthermore, a semiconductor component () is specified.

Method for manufacturing optoelectric semiconductor component and optoelectric semiconductor component device

A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

Method of autostereoscopic imaging and autostereoscopic illumination unit

A method for producing a semiconductor chip () is provided, in which, during a growth process for growing a first semiconductor layer (), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (), such that a lateral variation of a material composition of the first semiconductor layer () is produced. A semiconductor chip () is additionally provided.

Method for producing a semiconductor chip and semiconductor chip

A semiconductor chip () is provided, having a first semiconductor layer (), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ().

Semiconductor chip and method for producing a semiconductor chip

A light-emitting semiconductor chip () is provided, having a first semiconductor layer (), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ().

Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip

A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.

Growing community of inventors

Obertraubling, Germany

André Somers