Infineon Technologies Ag

Qimonda Ag

Andre Schäfer

Peter Gregorius

Paul Wallner

Kazimierz Szczypinski

Jens Polney

A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.

Semiconductor memory system and semiconductor memory chip

A method and a device are described for transmission of control information for the adjustment of operating parameters of drivers in the data interface of a RAM module by means of a controller, with control bits for adjustment purposes being sent during an adjustment mode by the controller as a burst of data bits at the data clock rate to the RAM module. According to the invention, each control bit which is sent from the controller via the data channel in the burst is represented by a sequence of n&#x2267;2 data bits, which have a binary value corresponding to the relevant control bit and follow one another at the data clock rate. The binary value of each control bit sent via the data channel is determined in the RAM module by detection of the binary value of the sent burst within the relevant sequence at a time at which the m-th data bit in the sequence appears, where m&#x3e;1.

Method and device for transmission of adjustment information for data interface drivers for a RAM module

A memory component comprises a memory cell array, signal inputs, input amplifiers connected to respective ones of the signal inputs, for receiving, amplifying and outputting data, address or control signals, a data, address or control signal generator for the memory cell array, a first supply network for supplying power to the input amplifiers and a second supply network for supplying power to the data, address or control signal generator, wherein the first supply network and the second supply network do not have a direct connection.

Memory component with improved noise insensitivity

An integrated circuit, in particular an integrated memory circuit, has an input circuit for the purpose of receiving a signal. The input circuit has an activation input for an activation signal in order to activate the input circuit, in a manner dependent on the activation signal, for the purpose of receiving signals.

Integrated circuit having an input circuit

Input circuit and method for setting a termination voltage. One embodiment provides a method for setting a termination voltage of an input circuit of an integrated circuit, the input circuit having an input terminal for receiving a signal, the termination voltage being applied to the input terminal, the received signal being driven with respect to the termination voltage and being evaluated by a comparison with a reference potential, the termination voltage being generated and being set in accordance with a control signal, the control signal being generated in a manner dependent on a comparison of one or more signal levels of the received signal with an assessment potential, the termination voltage being set by means of the control signal in such a way that the reliability of the signal reception is maximized.

Method for setting a termination voltage and an input circuit

An input circuit for receiving a signal at an input on an integrated circuit, particularly a DRAM circuit, and for assessing the signal with respect to a reference voltage is provided. One embodiment provides a termination circuit for setting a termination voltage, wherein the termination circuit includes a first resistor and a second resistor connected in series between a high voltage potential and a low voltage potential, the termination voltage being tapped between the first and second resistors, a first voltage-dependent resistor element having a first resistance gradient connected in parallel with the first resistor and a second voltage-dependent resistor element having a second resistance gradient connected in parallel with the second resistor, wherein the resistance values of the first and second resistor elements are controlled by a control voltage to set the termination voltage.

Growing community of inventors

Munich, Germany

Andre Schäfer