Becton Dickinson and Company Limited

Solid State Measurements, Inc.

Andre Scherz

Dwight Livingston

Mark A Talmer

Tong Zhou

Timothy Roy Hansen

Vladimir Vladimirovich Talanov

Kevin Bailey

Gerard J Sevigny

Andrew R Schwartz

Donald E Gorelick

Spencer Lovette

Christopher M Embres

Robert L Moreland

A system for automatically processing a biological specimen is provided that includes an elevator comprising a plurality of shelves configured to receive a plurality of sample trays. The trays may comprise a plurality of sample containers containing a sample and having a plurality of respective caps engaged therewith. The trays may further include a plurality of centrifuge tube racks each containing a plurality of centrifuge tubes. The system may include a first transport mechanism, a second transport mechanism and a third transport mechanism. The system may include a chain-of-custody device configured to read identifiers on each of the containers. The system may also include a pipetting device configured to remove a portion from the sample containers and dispense the sample into the centrifuge tubes.

System and method for automated sample preparation

By using techniques for near field probes to measure dielectric values of blanket films, the measure of the sidewall damage of the patterned structure is calculated. The interaction between the near field probe and the etched structure is modeled to obtain the model total capacitance. The near field microwave probe is calibrated on a set of blanket films with different thicknesses, and the dielectric constant of the etched trench structure is calculated using the measured frequency shift and calibration parameters. The measured capacitance is further calculated for the etched trench structure using the dielectric constant and the total thickness of the etched trench structure. The effective dielectric constant of the structure under study is extracted where the model capacitance is equal to the measured capacitance. The measure of the sidewall damage is further calculated using the effective dielectric constant.

Method and system for measurement of sidewall damage in etched dielectric structures using a near field microwave probe

A measurement technique based on a microwave near-field scanning probe is developed for non-contact measurement of dielectric constant of low-k films. The technique is non-destructive, non-invasive and can be used on both porous and non-porous dielectrics. The technique is based on measurement of resonant frequency shift of the near-field microwave resonator for a plurality of calibration samples vs. distance between the probe tip and the sample to construct a calibration curve. Probe resonance frequency shift measured for the sample under study vs. tip-sample separation is fitted into the calibration curve to extract the dielectric constant of the sample under study. The calibration permits obtaining a linear calibration curve in order to simplify the extraction of the dielectric constant of the sample under study.

Method and system for measurement of dielectric constant of thin films using a near field microwave probe

Growing community of inventors

Baltimore, MD, United States of America

Andre Scherz