Infineon Technologies Ag

Andre Schenk

Helmut Horst Tews

Axel Brintzinger

Ingo Uhlendorf

Alexander Wollanke

In a method for forming a semiconductor device, a gate electrode is formed over a semiconductor body (e.g., bulk silicon substrate or SOI layer). The gate electrode is electrically insulated from the semiconductor body. A first sidewall spacer is formed along a sidewall of the gate electrode. A sacrificial sidewall spacer is formed adjacent the first sidewall spacer. The sacrificial sidewall spacer and the first sidewall spacer overlying the semiconductor body. A planarization layer is formed over the semiconductor body such that a portion of the planarization layer is adjacent the sacrificial sidewall spacer. The sacrificial sidewall spacer can then be removed and a recess etched in the semiconductor body. The recess is substantially aligned between the first sidewall spacer and the portion of the planarization layer. A semiconductor material (e.g., SiGe or SiC) can then be formed in the recess.

Strained semiconductor device and method of making the same

A method is provided for the solder-stop structuring of elevations on wafers, such as 3D contact structures in the form of resilient or compliant contact bumps, which are connected electrically via a metallization layer to a bonding pad on the wafer, the metallization layer extending over the 3D structure and consisting of a Cu/Ni layer which is covered with a Au layer. The present invention provides a method for the solder-stop structuring of elevations on wafers which can be implemented simply and reliably to produce a reliable solder stop and good flank protection of the 3D structure. According to the invention, a resist is deposited on the tip of a 3D structure and a solder stop layer is then deposited over the metallization, including the resist. The resist on the tip of the 3D structure, including the solder stop layer covering the resist, is subsequently removed so that the Au layer on the tip of the 3D structure is exposed.

Growing community of inventors

Poughkeepsie, NY, United States of America

Andre Schenk