Thomson-Csf

Andre Nicollet

Michel Villard

Yves Henry

Henry Yves

A method for forming indium antimonide photodiodes by ionic implantation of the S.sub.34.sup.+ isotope of sulphur on a p type indium antimonide substrate. These photodiodes may be readily coupled to an N channel charge transfer device which provides multiplexing of the photodiodes and readout of the charges.

Process of manufactoring an indium antimonide photodiode

The surface of a substrate which includes a plurality of photovoltaic junctions spaced along it is prepared as follows: a first anodic oxide layer is formed to cover the whole surface of the substrate and ensures perfect control of the photovoltaic junctions, a second layer is deposited of metal which is impervious to the radiation to be detected, then through photolithography, only the zones of the second layer that it is desired to render impervious to the radiation to be detected are maintained and the remainder removed; and finally, a layer of dielectric material is deposited to cover the whole surface.

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Paris, France

Andre Nicollet