Evonik Degussa Gmbh

Evonik Operations Gmbh

Forschungszentrum Karlsruhe Gmbh

Friedrich-Alexander-Universitat Erlangen-Nürnberg

André Ebbers

Martin Trocha

Guido Stochniol

Martin Stutzmann

Dorit Wolf

Christian Lettmann

Nicole Brausch

Heiko Thiem

Hartmut Wiggers

Martin Brandt

Klaus Behrendt

Frank-Martin Petrat

Roland Schmechel

Jörg Sauer

Harald Stüger

Sebastian Babik

Robert Lechner

Steffen Cepa

Sven Hill

Koshi Okamura

Yücel Önal

Bernhard Stützel

Udo Spitzer

Katharina Rawert

Jessica Vieth

Gabriele Wrobel

Thilo Volker Kuntermann

Sabrina Mondrzyk

Tamas Barany

László József Varga

Andreas Luecke

Carla Cimpean

Carola Kryschi

The invention relates to amorphous poly-alpha-olefins, which are characterized in that said amorphous poly-alpha-olefins have a viscosity at 190° C. of less than 5000 mPas, a molar mass distribution (Mw/Mn) of 3 to 8, a quotient Mz/Mw of less than or equal to 3.0 and a quotient Mz/Mn of less than 21.0. The invention further relates to a method for producing degraded amorphous poly-alpha-olefins, in particular the amorphous poly-alpha-olefins according to the invention, and to the use of the amorphous polyalpha-olefins according to the invention or produced according to the invention in hot-melt adhesive compositions.

Amorphous poly-alpha-olefins and use thereof in hot-melt compositions having improved sprayability

Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200&#xb0; C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200&#xb0; C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite

Process for preparing higher hydridosilanes of the general formula H&#x2014;(SiH)&#x2014;H where n&#x2267;2, in which&#x2014;one or more lower hydridosilanes&#x2014;hydrogen, and&#x2014;one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Process for preparing higher hydridosilanes

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5&#xb7;10S&#xb7;cmto 10 S&#xb7;cm, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that

Porous semiconductive film and process for its production

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Bochum, Germany

André Ebbers