Infineon Technologies Ag

André Christmann

Patrick Jones

Daniel Domes

A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Low stray inductance power module

A power module includes a housing, a power semiconductor die enclosed within the housing and a first power terminal embedded in the housing and electrically connected to the power semiconductor die. A portion of the first power terminal protrudes outward from an external surface of the housing. The power module further includes a second power terminal embedded in the housing and electrically connected to the power semiconductor die and electrically insulated from the first power terminal. A portion of the second power terminal protrudes outward from the external surface of the housing by a distance less than the portion of the first power terminal so that the module has power connections with different heights.

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Novi, MI, United States of America

André Christmann