Infineon Technologies Ag

Andre Arens

Alexander Herbrandt

Jens Barrenscheen

Juergen Hoegerl

Alparslan Takkac

Ulrich Michael Georg Schwarzer

Regina Nottelmann

Michael Ebli

Reinhold Bayerer

Peter Kanschat

Holger Torwesten

Magdalena Hoier

Marco Ludwig

Waldemar Jakobi

Hartmut Jasberg

Ulrich Schwarzer

Martin Goldammer

Philipp Bräutigam

Philipp Braeutigam

A power semiconductor module arrangement includes a housing that includes sidewalls, a lid, protrusions, a substrate, a plurality of components arranged on the substrate, and an encapsulant partly filling the interior of the housing, thereby covering the substrate, wherein each of the protrusions extends from the lid of the housing, a lower end of the protrusions is arranged directly on one of the components, or within a defined radius around one of the components, and wherein the lower end of a protrusion is the end facing away from the lid and towards the substrate, and the encapsulant has a generally flat surface and forms one or more elevations, wherein each of the elevations encloses an upper end of a different one of the components, and encloses the lower end of a respective one of the protrusions.

Power semiconductor module arrangements and methods for producing power semiconductor module arrangements

An apparatus comprises a power module housing. The power module housing includes a conductive substrate and a circuit board positioned overlying the conductive substrate. A gate driver is mounted to the circuit board. A power device is mounted to the conductive substrate and is controlled by the gate driver. The power module housing includes an insulation material electrically insulating the conductive substrate from the circuit board. A monitoring component is mounted to at least the conductive substrate and is operatively coupled to the gate driver and the power device.

Power module with integrated gate driver and functional components within a single power module housing

A method for producing a power semiconductor module arrangement includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a first metallization layer attached to a dielectric insulation layer, the housing including a through hole extending through a component of the housing; inserting a fastener into the through hole such that an upper portion of the fastener is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a mounting surface, the mounting surface comprising a hole, wherein the housing is arranged on the mounting surface such that the through hole is aligned with the hole in the mounting surface; and exerting a force on the printed circuit board such that the force causes the fastener to be pressed into the hole in the mounting surface so as to secure the housing to the mounting surface.

Power semiconductor module arrangement and method for producing a power semiconductor module arrangement

An arrangement includes a housing and a printed circuit board (PCB) arranged vertically above the housing. The housing includes: at least one protrusion attached to sidewalls and arranged on an outside of the housing at a lower end with at least one first through hole provided in the protrusion; holding devices each arranged inside a first through hole and/or between the PCB and the first through hole; and fastening elements configured to attach the housing to a heat sink or base plate. Each holding device is configured to clamp a corresponding fastening element such that the fastening elements are secured in defined positions, and to align each fastening element with a different first through hole. The PCB includes second through holes each arranged vertically above and aligned with a different fastening element. A diameter of each second through hole is less than the largest diameter of the respective fastening element.

Housing for a power semiconductor module arrangement

A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Power semiconductor module and a method for producing a power semiconductor module

This disclosure is directed to circuits and techniques for detecting or responding to temperature of a power switch. A driver circuit for the power switch may be configured to deliver a modulation signal to a control node of the power switch to control on/off switching of the power switch, wherein the driver circuit is further configured to modulate an output impedance of the driver circuit at the control node, perform one or more voltage measurements while modulating the output impedance of the driver circuit, and control the power switch based at least in part on the one or more voltage measurements.

Temperature detection of power switch using modulation of driver output impedance

This disclosure is directed to circuits and techniques for detecting or responding to temperature of a power switch based on paired measurements of current and voltage. A driver circuit for a power switch may be configured to perform a current measurement and a voltage measurement associated with a temperature-dependent circuit element and control the power switch based at least in part on the current measurement and the voltage measurement. In some examples, the current and voltage measurements may be used to determine the temperature of the power switch.

Temperature detection of a power switch based on paired measurements of current and voltage

A semiconductor module is disclosed. In one example, the module includes a carrier, at least one semiconductor transistor disposed on the carrier, at least one semiconductor diode disposed on the carrier, at least one semiconductor driver chip disposed on the carrier, a plurality of external connectors, and an encapsulation layer covering the carrier, the semiconductor transistor, the semiconductor diode, and the semiconductor driver chip. The semiconductor transistor, the semiconductor diode, and the semiconductor driver chip are arranged laterally side by side on the carrier.

Semiconductor module comprising transistor chips, diode chips and driver chips arranged in a common plane

A printed circuit board (PCB) has a first, structured metalization arranged on its top side and at least one second metalization arranged below the first metalization in a vertical direction, parallel to the first metalization and insulated therefrom. Also on the PCB top side is a bare semiconductor chip having contact electrodes connected by bonding wires to corresponding contact pads of the first metalization on the PCB top side. A first portion of the contact electrodes and corresponding contact pads carry high voltage during operation. All high-voltage-carrying contact pads are conductively connected to the second metalization via plated-through holes. An insulation layer completely covers the chip and a delimited region of the PCB around the chip, and all high-voltage-carrying contact pads and the plated-through holes are completely covered by the insulation layer. A second portion of the contact electrodes and corresponding contact pads are under low voltages during operation.

Power semiconductor module and method for producing a power semiconductor module

An electronics assembly includes a plurality of first semiconductor chips each having a first load terminal and a second load terminal, a conductor structure having a first conductor strip, a second conductor strip and a third conductor strip, a plurality of first interference-suppression capacitors arranged on the conductor structure and each having a first capacitor terminal and a second capacitor terminal, and a heat sink. The first load terminal of each first semiconductor chip is electrically connected to the first conductor strip, the second load terminal of each first semiconductor chip is electrically connected to the third conductor strip, the first capacitor terminal of each first interference-suppression capacitor is electrically connected to the first conductor strip, the second capacitor terminal of each first interference-suppression capacitor is electrically connected to the second conductor strip, and the heat sink is electrically connected to the second conductor strip.

Electronics assembly with interference-suppression capacitors

A semiconductor module includes a printed circuit board, and first and second embedded semiconductor chips. The first and second semiconductor chips each have a first load connection and a second load connection. The printed circuit board further includes a structured first metalization layer, which has a first section and a second section, and a structured second metalization layer, which has a first section, a second section and a third section. The first section of the second metalization layer and the second section of the first metalization layer have comb shaped structures having first and second protrusions. These first and second sections are electrically conductively connected to one another by a number of first plated-through holes each of which is permanently electrically conductively connected both at first protrusions to the first section of the second metalization layer and at second protrusions to the second section of the first metalization layer.

Semiconductor module with low inductance load connections

A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band.

Growing community of inventors

Ruethen, Germany

Andre Arens