University of Toronto

Invisage Technologies, Inc.

Andras Pattantyus-Abraham

Edward Hartley Sargent

Gerasimos Konstantatos

Jiang Tang

Aaron Barkhouse

Xihua Wang

Illan Kramer

Ratan Debnath

Nikolai E Bock

Emanuele Mandelli

Jason Paul Clifford

Edward H Sargent

Konstantatos Gerasimos

Keith William Johnston

Imaging apparatus () includes a photosensitive medium () configured to convert incident photons into charge carriers. A bias electrode () overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits () are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel () and includes first and second pixel electrodes () coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates () in respective proximity to the first and second pixel electrodes. Circuitry () is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.

Image sensor with phase-sensitive pixels

Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.

Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Schottky-quantum dot photodetectors and photovoltaics

Growing community of inventors

Burnaby, Canada

Andras Pattantyus-Abraham