Lam Research Corporation

University of Southern California

Transient Plasma Systems, Inc.

Andras Kuthi

Andrew D Bailey, Iii

Arthur M Howald

Martin Adolph Gundersen

Alan M Schoepp

Gregory Sexton

Thomas W Anderson

Jason M Sanders

John Boyd

Andreas Fischer

Yunsang Kim

Michael G R Smith

Mark Henry Wilcoxson

Rongping Wang

Tuan Ngo

Daniel Singleton

James C Vetter

Stephen Hwang

Greg Eilenstine

Neil M Benjamin

Hyungsuk Alexander Yoon

William Thie

Lumin Li

Butch Berney

Pavitra Krishnaswamy

William Henry Moore

Shen Peng

Eric H Lenz

Peter K Loewenhardt

Bradford J Lyndaker

Dan A Marohl

Vahid Vahedi

David J Hemker

William S Kennedy

Jisoo Kim

Albert R Ellingboe

Reza Sadjadi

Babak Kadkhodayan

Shrikant Lohokare

Keechan Kim

Greg Sexton

Mark Wiepking

Oscar Lopez

David Setton

Jimmy Nguyen

Craig Rosslee

Andres Leming

Rajindar Dhindsa

Daniel Marohl

Andrew D Iii Bailey

Iii Andrew D Bailey

Michael GR Smith

A coil portion is formed. A first articulation portion extends from the coil portion. A first mounting structure extends from the first articulation portion. The first mounting structure includes a first mounting region configured to mount in contact with a terminal of a first electrical component. The first articulation portion and the first mounting structure are configured to position the first mounting region at a location outside of a strong electromagnetic field emanating from the coil portion. A second articulation portion extends from the coil portion. A second mounting structure extends from the second articulation portion. The second mounting structure includes a second mounting region configured to mount in contact with a terminal of a second electrical component. The second articulation portion and the second mounting structure are configured to position the second mounting region at a location outside of the strong electromagnetic field emanating from the coil portion.

Articulated direct-mount inductor and associated systems and methods

A first inductive loop is formed within a printed circuit board (PCB). The PCB is mounted in a fixed spatial relationship with a radiofrequency power supply structure. A second inductive loop is formed within the PCB. The second inductive loop is positioned in fixed spatial relationship with the first inductive loop such that a distance between the centerpoints of the first and second inductive loops has a fixed value and is precisely known. Each of the first and second inductive loops is formed in an essentially identical manner with regard to number of complete turns of the loops and a size of the loops. A first voltage signal present on the first inductive loop and a second voltage signal present on the second inductive loop and the distance between the first and second loops provide for determination of a radiofrequency current present on the radiofrequency power supply structure.

Inductive current sensor on printed circuit board

Disclosed are methods and systems for subnanosecond rise time high voltage (HV) electric pulse delivery to biological loads. The system includes an imaging device and monitoring apparatus used for bio-photonic studies of pulse induced intracellular effects. The system further features a custom fabricated microscope slide having micro-machined electrodes. A printed circuit board to interface the pulse generator to the micro-machined glass slide having the cell solution is disclosed. An low-parasitic electronic setup to interface with avalanche transistor-switched pulse generation system is also disclosed. The pc-board and the slide are configured to match the output impedance of the pulse generator which minimizes reflection back into the pulse generator, and minimizes distortion of the pulse shape and pulse parameters. The pc-board further includes a high bandwidth voltage divider for real-time monitoring of pulses delivered to the cell solutions.

Compact subnanosecond high voltage pulse generation system for cell electro-manipulation

A system and method for providing multiple fast rising pulses to improve performance efficiency. In one approach, multiple fast rising pulse power is employed to improve fuel efficiency and power of an engine. The system and method can involve a transient plasma plug assembly intended to replace a traditional spark plug. Alternatively, an approach involving a pulse generator and a high voltage pulse carrying ignition cable is contemplated.

Repetitive ignition system for enhanced combustion

Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Measuring and controlling wafer potential in pulsed RF bias processing

The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

Methods for processing bevel edge etching

A device for providing ignition of a fuel-air mixture using a transient plasma discharge is provided. The device includes an anode coupled to receive a voltage; and a cathode disposed in proximity to the anode and coupled to a ground, wherein at least one of the anode and the cathode includes a protrusion that enhances an electric field formed between the anode and the cathode, the protrusion forming a sharp edge defining a plurality of points, each point forming a path of shortest distance between the anode and the cathode.

Electrodes for multi-point ignition using single or multiple transient plasma discharges

Edge electrodes with dielectric covers

An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

Apparatus for the removal of a fluorinated polymer from a substrate

A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.

Bevel edge plasma chamber with top and bottom edge electrodes

An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Antenna for plasma processor and apparatus

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Thousand Oaks, CA, United States of America

Andras Kuthi